Product Information

BAT54C RFG

BAT54C RFG electronic component of Taiwan Semiconductor

Datasheet
Schottky Diodes & Rectifiers 0.2A, 30V, SURFACE MOUNT SCHOTTKY BARIER DIODE; DUAL CHIP; CO ON CATHODE
Manufacturer: Taiwan Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.2036 ea
Line Total: USD 0.2

5431 - Global Stock
Ships to you between
Fri. 24 May to Tue. 28 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
2521 - WHS 1


Ships to you between Fri. 24 May to Tue. 28 May

MOQ : 1
Multiples : 1

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BAT54C RFG
Taiwan Semiconductor

1 : USD 0.2036
10 : USD 0.1403
100 : USD 0.0575
1000 : USD 0.0403
3000 : USD 0.0241
9000 : USD 0.0219

Read More Specifications

     
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RoHS - XON
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Mxhts
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Additional Infomation About Product

BAT54 / A / C / S Taiwan Semiconductor 200mA, 30V Schottky Barrier Diode FEATURES KEY PARAMETERS Fast switching speed PARAMETER VALUE UNIT Surface mound device type I 200 mA F Moisture sensitivity level: level 1, per J-STD-020 V 30 V RRM RoHS Compliant Halogen-free according to IEC 61249-2-21 I 600 mA FSM V at I = 100mA 1 V F F APPLICATIONS T 125 C J MAX Adapters Package SOT-23 For switching power supply Inverter MECHANICAL DATA Case: SOT-23 Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 1A whisker test Weight: 8.00mg (approximately) SOT-23 ABSOLUTE MAXIMUM RATINGS (T = 25C unless otherwise noted) A PARAMETER SYMBOL BAT54 BAT54A BAT54C BAT54S UNIT Marking code on the device KL1 KL2 KL3 KL4 Power dissipation P 200 mW D Repetitive peak reverse voltage V 30 V RRM Repetitive peak forward current I 300 mA FRM (tp1s 0.5) Forward current I 200 mA F Non-Repetitive peak forward surge current I 600 mA FSM t<1.0s Junction temperature range T -55 to +125 C J Storage temperature range T -55 to +125 C STG 1 Version: G2007 BAT54 / A / C / S Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-ambient thermal resistance R 500 C/W JA ELECTRICAL SPECIFICATIONS (T = 25C unless otherwise noted) A PARAMETER CONDITIONS SYMBOL MIN MAX UNIT I = 0.1mA, T = 25C - 0.24 F J V I = 1mA, T = 25C - 0.32 F J V (1) Forward voltage per diode I = 10mA, T = 25C - 0.40 F J V V F I = 30mA, T = 25C - 0.50 F J V I = 100mA, T = 25C - 1.00 F J V Reverse voltage I = 100 A, T = 25C 30 - R J V V R (2) Reverse current rated V per diode V = 25 V, T = 25C - 2 R R J I A R Junction capacitance f = 1MHz, V = 1V - 10 R C pF J I = I = 10mA, F R Reverse recovery time - 5 t ns rr R = 100, I = 1mA L rr Notes: 1. Pulse test with PW = 0.3ms 2. Pulse test with PW = 30ms ORDERING INFORMATION (1)(2) ORDERING CODE PACKAGE PACKING BAT5x RF SOT-23 3K / 7 Reel BAT5x RFG SOT-23 3K / 7 Reel Notes: 1. defines part no. from4 to4 2. means green compound (halogen-free) 2 Version: G2007

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

Taiwan Semiconductor may also be referenced as

TAIWAN SEMI
Taiwan Semicon
TAIWAN SEMICONDUCTOR MANUFACTURING
Taiwan Semiconductor(Taiwan Semicon)
TSC (Taiwan Semiconductor)

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