Product Information

NSR20F30NXT5G

NSR20F30NXT5G electronic component of ON Semiconductor

Datasheet
ON Semiconductor Schottky Diodes & Rectifiers 0603 FC SCHOTTKY DIODES
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

3: USD 0.4511 ea
Line Total: USD 1.35

1249 - Global Stock
Ships to you between
Tue. 28 May to Mon. 03 Jun
MOQ: 3  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
432 - WHS 1


Ships to you between
Tue. 04 Jun to Fri. 07 Jun

MOQ : 1
Multiples : 1

Stock Image

NSR20F30NXT5G
ON Semiconductor

1 : USD 0.6655
10 : USD 0.5569
30 : USD 0.5036
100 : USD 0.4483
500 : USD 0.4167
1000 : USD 0.3377

1231 - WHS 2


Ships to you between Tue. 28 May to Mon. 03 Jun

MOQ : 3
Multiples : 1

Stock Image

NSR20F30NXT5G
ON Semiconductor

3 : USD 0.4511
25 : USD 0.4043
50 : USD 0.3328
137 : USD 0.3146
5000 : USD 0.3029

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ifsm - Forward Surge Current
Ir - Reverse Current
Pd - Power Dissipation
Series
Packaging
Brand
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Additional Infomation About Product

NSR20F30NXT5G Schottky Barrier Diode These Schottky barrier diodes are optimized for low forward voltage drop and low leakage current and are offered in a Chip Scale Package (CSP) to reduce board space. The low thermal resistance enables designers to meet the challenging task of achieving higher efficiency and meeting reduced space requirements. NSR20F30NXT5G THERMAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Thermal Resistance JunctiontoAmbient (Note 1) R 213 C/W JA Total Power Dissipation T = 25C P 586 mW A D Thermal Resistance JunctiontoAmbient (Note 2) R 80 C/W JA Total Power Dissipation T = 25C P 1.56 W A D Storage Temperature Range T 40 to +125 C stg Junction Temperature T +150 C J 1. Mounted onto a 4 in square FR4 board 50 mm sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. 2. Mounted onto a 4 in square FR 4 board 1 in sq. 1 oz. Cu 0.06 thick single sided. Operating to steady state. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit Reverse Leakage I A R (V = 10 V) 20 R (V = 30 V) 150 R Forward Voltage V V F (I = 1.0 A) 0.42 F (I = 2.0 A) 0.48 F 10 100000 150C 10000 T = 125C J 125C 1000 1 T = 150C J 75C 100 10 0.1 25C 1 0.01 0.1 25C 0.01 75C 25C 25C 0.001 0.001 0.0 0.1 0.2 0.3 0.4 0.50251105025 30 V , FORWARD VOLTAGE (V) V , REVERSE VOLTAGE (V) F R Figure 2. Typical Reverse Current Figure 1. Forward Voltage 450 T = 25C A 400 350 300 250 200 150 100 50 0 0150 1520 2530 V , REVERSE VOLTAGE (V) R Figure 3. Typical Capacitance

HS Compliance

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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