NSS12200WT1G ON Semiconductor

NSS12200WT1G Low V Transistor, CE(sat) PNP, 12 V, 2.0 A, SOT-363 Package 2 ON Semiconductors e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low NSS12200WT1G THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Total Device Dissipation P (Note 1) 450 mW D T = 25C A Derate above 25C 3.6 mW/C Thermal Resistance, R (Note 1) 275 C/W JA Junction toAmbient Total Device Dissipation P (Note 2) 650 mW D T = 25C A Derate above 25C 5.2 mW/C Thermal Resistance, R (Note 2) 192 C/W JA Junction toAmbient Thermal Resistance, 105 C/W R JL JunctiontoLead 6 Total Device Dissipation P Single 1.4 W D (Single Pulse < 10 sec.) Junction and Storage T , T 55 to +150 C J stg Temperature Range ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Collector Emitter Breakdown Voltage, (I = 10 mAdc, I = 0) V 12 15 Vdc C B (BR)CEO Collector Base Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 12 25 Vdc C E (BR)CBO Emitter Base Breakdown Voltage, (I = 0.1 mAdc, I = 0) V 5.0 7.0 Vdc E C (BR)EBO Collector Cutoff Current, (V = 12 Vdc, I = 0) I 0.02 0.1 Adc CB E CBO CollectorEmitter Cutoff Current, (V = 12 Vdc, I = 0) I 0.03 0.1 Adc CES E CES Emitter Cutoff Current, (V = 5.0 Vdc, I = 0) I 0.03 0.1 Adc EB E EBO ON CHARACTERISTICS DC Current Gain (Note 3) h FE (I = 0.5 A, V = 1.5 V) 100 180 C CE (I = 0.8 A, V = 1.5 V) 100 165 300 C CE (I = 1.0 A, V = 1.5 V) 100 160 C CE Collector Emitter Saturation Voltage (Note 3) V V CE(sat) (I = 0.5 A, I = 10 mA) 0.10 0.160 C B (I = 0.8 A, I = 16 mA) 0.14 0.235 C B (I = 1.0 A, I = 20 mA) 0.17 0.290 C B Base Emitter Saturation Voltage (Note 3) V V BE(sat) (I = 1.0 A, I = 20 mA) 0.84 0.95 C B Base Emitter Turnon Voltage (Note 3) V V BE(on) (I = 1.0 A, V = 1.5 V) 0.81 0.95 C CE Cutoff Frequency f MHz T (I = 100 mA, V = 5.0 V, f = 100 MHz) 100 C CE Output Capacitance C pF obo (V = 1.5 V, f = 1.0 MHz) 50 65 CB 1. FR4, Minimum Pad, 1 oz Coverage. 2. FR 4, 1 Pad, 1 oz Coverage. 3. Pulsed Condition: Pulse Width < 300 sec, Duty Cycle < 2%.