Product Information

NSRLL30XV2T1G

NSRLL30XV2T1G electronic component of ON Semiconductor

Datasheet
Schottky Diodes & Rectifiers SWITCHING DIODE SOD523

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.3559 ea
Line Total: USD 0.36

207808 - Global Stock
Ships to you between
Mon. 03 Jun to Wed. 05 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
207258 - WHS 1


Ships to you between Mon. 03 Jun to Wed. 05 Jun

MOQ : 1
Multiples : 1

Stock Image

NSRLL30XV2T1G
ON Semiconductor

1 : USD 0.345
10 : USD 0.238
100 : USD 0.0978
1000 : USD 0.0679
3000 : USD 0.0541
9000 : USD 0.0448
24000 : USD 0.0437
99000 : USD 0.0402

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Product
Mounting Style
Package / Case
Configuration
Technology
If - Forward Current
Vrrm - Repetitive Reverse Voltage
Vf - Forward Voltage
Ir - Reverse Current
Minimum Operating Temperature
Maximum Operating Temperature
Series
Qualification
Packaging
Operating Temperature Range
Brand
Forward Continuous Current
Forward Voltage Drop
Maximum Reverse Leakage Current
Peak Reverse Voltage
Factory Pack Quantity :
Height
Length
Termination Style
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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NSRLL30XV2 Schottky Barrier Diode These Schottky barrier diodes are designed for highspeed switching applications, circuit protection, and voltage clamping. Extremely low forward voltage reduces conduction loss. Miniature surface mount package is excellent for handheld and portable applications where space is limited. www.onsemi.com Features Extremely Fast Switching Speed Extremely Low Forward Voltage 0.6 V (max) I = 200 mA 30 VOLT SCHOTTKY F Low Reverse Current BARRIER DIODE ESD Rating: Class 3B per Human Body Model Class C per Machine Model This is a PbFree Device 1 2 CATHODE ANODE MAXIMUM RATINGS Rating Symbol Value Unit 2 Reverse Voltage V 30 V R Forward Current DC I 200 mA F 1 Stresses exceeding those listed in the Maximum Ratings table may damage the SOD523 device. If any of these limits are exceeded, device functionality should not be CASE 502 assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Characteristic Symbol Max Unit MARKING DIAGRAM Total Device Dissipation FR5 Board, P 200 mW D (Note 1) T = 25C A Derate above 25C 1.57 mW/C RT M NonRepetitive Peak Forward I 600 mA FSM 12 Current, t < 10 msec p Repetitive Peak Forward Current I 300 mA FRM RT = Device Code Pulse Wave = 1 sec, Duty Cycle = 66% M = Date Code* = PbFree Package Thermal Resistance, JunctiontoAmbient R 635 C/W JA (Note: Microdot may be in either location) Junction and Storage Temperature Range T , T 55 to +150 C J stg *Date Code orientation position may vary depending 1. FR5 Minimum Pad. upon manufacturing location. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Typ Max Unit ORDERING INFORMATION Reverse Leakage I 1.0 A R (V = 10 V) R Device Package Shipping Forward Voltage V 0.60 V F NSRLL30XV2T1G SOD523 3000/Tape & Reel (I = 200 mA) F (PbFree) NSRLL30XV2T5G SOD523 8000/Tape & Reel (PbFree) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: August, 2018 Rev. 4 NSRLL30XV2/DNSRLL30XV2 820 +10 V 2 k 0.1 F I F t t t p I F 100 H r t t 10% 0.1 F rr DUT 90% 50 Output 50 Input i = 1 mA Pulse Sampling R(REC) I R Generator Oscilloscope V R OUTPUT PULSE INPUT SIGNAL (I = I = 10 mA measured F R at i = 1 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 10 mA. F Notes: 2. Input pulse is adjusted so I is equal to 10 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit 200 1000 T = 150C A 100 100 T = 125C A 1 50C 10 10 1.0 T = 85C A 1 25C 0.1 1.0 85C 25C 0.01 40C 55C T = 25C A 0.1 0.001 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 510 15 20 25 30 V , FORWARD VOLTAGE (VOLTS) V , REVERSE VOLTAGE (VOLTS) F R Figure 2. Forward Voltage Figure 3. Leakage Current 25 14 Based on square wave currents T = 25C prior to surge 12 J 20 10 15 8 6 10 4 5 2 0 0 0 510 15 20 25 30 0.001 0.01 0.1 1 10 100 1000 V , REVERSE VOLTAGE (VOLTS) t , PULSE ON TIME (ms) R P Figure 4. Total Capacitance Figure 5. Forward Surge Current www.onsemi.com 2 C , TOTAL CAPACITANCE (pF) T I , FORWARD CURRENT (mA) F I , REVERSE CURRENT ( A) I , FORWARD SURGE MAX CURRENT (A) R FSM

Tariff Desc

8541.10.00 15 No - Diodes, other than photosensitive or light emitting diodes Free
Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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