NSVBAS21M3T5G ON Semiconductor

BAS21M3T5G 250V High Voltage Switching Diode The BAS21M3T5G device is a spinoff of our popular SOT23 threeleaded device. It is designed for high voltage switching applications and is housed in the SOT723 surface mount package. BAS21M3T5G ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) A Characteristic Symbol Min Max Unit Reverse Voltage Leakage Current I Adc R (V = 200 Vdc) 0.1 R (V = 200 Vdc, T = 150C) 100 R J V 250 Vdc Reverse Breakdown Voltage (I = 100 Adc) BR (BR) Forward Voltage V Vdc F (I = 100 mAdc) 1.0 F (I = 200 mAdc) 1.25 F Diode Capacitance (V = 0, f = 1.0 MHz) C 5.0 pF R D Reverse Recovery Time (I = I = 30 mAdc, I = 3.0 mAdc, R = 100) t 50 ns F R R(REC) L rr Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 820 I F +10 V t t t 2.0 k r p 0.1 F I F t t 100 H rr 10% 0.1 F 90% D.U.T. I = 3.0 mA R(REC) 50 OUTPUT 50 INPUT I R SAMPLING V PULSE R OUTPUT PULSE OSCILLOSCOPE GENERATOR INPUT SIGNAL (I = I = 30 mA MEASURED F R at I = 3.0 mA) R(REC) Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I ) of 30 mA. F Notes: 2. Input pulse is adjusted so I is equal to 30 mA. R(peak) Notes: 3. t t p rr Figure 1. Recovery Time Equivalent Test Circuit