NTB6412AN, NTP6412AN, NVB6412AN N-Channel Power MOSFET 100 V, 58 A, 18.2 m Features Low R DS(on) www.onsemi.com High Current Capability 100% Avalanche Tested I MAX D NVB Prefix for Automotive and Other Applications Requiring V R MAX (Note 1) (BR)DSS DS(ON) Unique Site and Control Change Requirements AECQ101 100 V 18.2 m 10 V 58 A Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant NChannel D MAXIMUM RATINGS (T = 25C Unless otherwise specified) J Parameter Symbol Value Unit DraintoSource Voltage V 100 V DSS G GatetoSource Voltage Continuous V 20 V GS Continuous Drain Cur- Steady T = 25C I 58 A D C rent R State JC S T = 100C 41 C 4 Power Dissipation Steady T = 25C P 167 W C D R State JC 4 Pulsed Drain Current t = 10 s I 240 A p DM 1 2 Operating Junction and Storage Temperature T , T 55 to C J stg Range +175 3 Source Current (Body Diode) I 58 A 2 S TO220AB D PAK CASE 221A CASE 418B Single Pulse DraintoSource Avalanche E 300 mJ AS 1 STYLE 5 STYLE 2 Energy (V = 50 Vdc, V = 10 Vdc, DD GS 2 I = 44.7 A, L = 0.3 mH, R = 25 ) 3 L(pk) G Lead Temperature for Soldering T 260 C L MARKING DIAGRAM Purposes, 1/8 from Case for 10 Seconds & PIN ASSIGNMENT 4 THERMAL RESISTANCE RATINGS 4 Drain Drain Parameter Symbol Max Unit JunctiontoCase (Drain) Steady State R 0.9 C/W JC NTB JunctiontoAmbient (Note 1) R 33 JA NTP 6412ANG Stresses exceeding those listed in the Maximum Ratings table may damage the 6412ANG AYWW device. If any of these limits are exceeded, device functionality should not be AYWW assumed, damage may occur and reliability may be affected. 2 1. Surface mounted on FR4 board using 1 sq in pad size, 1 3 1 3 Drain (Cu Area 1.127 sq in 2 oz including traces). Gate Source Gate Source 2 6412AN = Specific Device Code Drain G = PbFree Device A = Assembly Location Y = Year WW = Work Week ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: January, 2015 Rev. 2 NTB6412AN/DNTB6412AN, NTP6412AN, NVB6412AN ELECTRICAL CHARACTERISTICS (T = 25C Unless otherwise specified) J Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 100 V (BR)DSS GS D DraintoSource Breakdown Voltage Temper- V /T 103 mV/C (BR)DSS J ature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 100 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 2.0 4.0 V GS(th) GS DS D Negative Threshold Temperature Coefficient V /T 9.2 mV/C GS(th) J DraintoSource OnResistance R V = 10 V, I = 58 A 16.8 18.2 m DS(on) GS D V = 10 V, I = 20 A 15.6 18.2 GS D Forward Transconductance g V = 5 V, I = 20 A 31 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 2700 3500 pF iss V = 25 V, V = 0 V, DS GS Output Capacitance C 400 500 oss f = 1 MHz Reverse Transfer Capacitance C 150 rss Total Gate Charge Q 73 100 nC G(TOT) Threshold Gate Charge Q 2.5 G(TH) V = 10 V, V = 80 V, GS DS GatetoSource Charge Q 13.5 GS I = 58 A D GatetoDrain Charge Q 35 GD Plateau Voltage V 5.6 V GP Gate Resistance R 2.2 G SWITCHING CHARACTERISTICS, V = 10 V (Note 3) GS ns TurnOn Delay Time t 16 d(on) Rise Time t 140 r V = 10 V, V = 80 V, GS DD I = 58 A, R = 6.2 D G TurnOff Delay Time t 70 d(off) Fall Time t 126 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.96 1.3 V SD J I = 58 A S T = 125C 0.89 J Reverse Recovery Time t 85 ns rr Charge Time t 60 a V = 0 V, I = 58 A, GS S dI /dt = 100 A/ s SD Discharge Time t 25 b Reverse Recovery Charge Q 270 nC RR 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2