X-On Electronics has gained recognition as a prominent supplier of NTD12N10T4G mosfet across the USA, India, Europe, Australia, and various other global locations. NTD12N10T4G mosfet are a product manufactured by ON Semiconductor. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

NTD12N10T4G

NTD12N10T4G electronic component of ON Semiconductor
Images are for reference only
See Product Specifications
Part No. NTD12N10T4G
Manufacturer: ON Semiconductor
Category: MOSFET
Description: MOSFET 100V 12A N-Channel
Datasheet: NTD12N10T4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

2500: USD 0.1999 ea
Line Total: USD 499.75

Availability - 0
MOQ: 2500  Multiples: 2500
Pack Size: 2500
Availability Price Quantity
0 - WHS 1


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2500
Multiples : 1
2500 : USD 0.3802
2500 : USD 0.3621
2500 : USD 0.3501
5000 : USD 0.3199
10000 : USD 0.3199
20000 : USD 0.3018

0 - WHS 2


Ships to you between Thu. 30 May to Wed. 05 Jun

MOQ : 2500
Multiples : 2500
2500 : USD 0.1999
2501 : USD 0.0965
5001 : USD 0.0944

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Channel Mode
Configuration
Brand
Forward Transconductance - Min
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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NTD12N10 Power MOSFET 12 Amps, 100 Volts N Channel EnhancementMode DPAK NTD12N10 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) C Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 100 GS D Temperature Coefficient (Positive) 135 mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 0 Vdc, V = 100 Vdc, T = 25C) 5.0 GS DS J (V = 0 Vdc, V = 100 Vdc, T = 125C) 50 GS DS J GateBody Leakage Current (V = 20 Vdc, V = 0) I 100 nAdc GS DS GSS ON CHARACTERISTICS Gate Threshold Voltage V Vdc GS(th) V = V I = 250 Adc) 2.0 3.1 4.0 DS GS, D Temperature Coefficient (Negative) 7.5 mV/C Static DraintoSource OnState Resistance R DS(on) (V = 10 Vdc, I = 6.0 Adc) 0.130 0.165 GS D (V = 10 Vdc, I = 6.0 Adc, T = 125C) 0.250 0.400 GS D J DraintoSource OnVoltage V Vdc DS(on) (V = 10 Vdc, I = 12 Adc) 1.62 2.16 GS D Forward Transconductance (V = 10 Vdc, I = 6.0 Adc) g 7.0 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 390 550 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 115 160 oss f = 1.0 MHz) Reverse Transfer Capacitance C 35 70 rss SWITCHING CHARACTERISTICS (Notes 4 & 5) TurnOn Delay Time t 11 20 ns d(on) Rise Time t 30 60 (V = 80 Vdc, I = 12 Adc, r DD D V = 10 Vdc, R = 9.1 ) GS G Turn Off Delay Time t 22 40 d(off) Fall Time t 32 60 f Total Gate Charge Q 14 20 nC tot (V = 80 Vdc, I = 12 Adc, DS D GatetoSource Charge Q 3.0 gs V = 10 Vdc) GS GatetoDrain Charge Q 7.0 gd BODYDRAIN DIODE RATINGS (Note 4) Diode Forward OnVoltage (I = 12 Adc, V = 0 Vdc) V 0.95 1.0 Vdc S GS SD (I = 12 Adc, V = 0 Vdc, T = 125C) 0.80 S GS J t 85 Reverse Recovery Time ns rr (I = 12 Adc, V = 0 Vdc, S GS t 60 a dI /dt = 100 A/ s) S t 28 b Reverse Recovery Stored Charge Q 0.3 C RR 4. Indicates Pulse Test: P.W. = 300 s max, Duty Cycle = 2%. 5. Switching characteristics are independent of operating junction temperature. ORDERING INFORMATION Device Package Shipping NTD12N10G DPAK 75 Units/Rail (Pb Free) NTD12N10 1G DPAK 3 75 Units/Rail (Pb Free) NTD12N10T4G DPAK 2500 Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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