X-On Electronics has gained recognition as a prominent supplier of NTD14N03RT4G MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD14N03RT4G MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD14N03RT4G ON Semiconductor

NTD14N03RT4G electronic component of ON Semiconductor
NTD14N03RT4G ON Semiconductor
NTD14N03RT4G MOSFETs
NTD14N03RT4G  Semiconductors

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See Product Specifications
Part No. NTD14N03RT4G
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: MOSFET 25V 14A N-Channel
Datasheet: NTD14N03RT4G Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.8288 ea
Line Total: USD 0.83 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 57
Multiples : 57
57 : USD 0.4508
100 : USD 0.4128
250 : USD 0.388
500 : USD 0.368

0
Ship by Wed. 04 Jun to Tue. 10 Jun
MOQ : 2500
Multiples : 2500
2500 : USD 0.7233

0
Ship by Wed. 11 Jun to Mon. 16 Jun
MOQ : 1
Multiples : 1
1 : USD 0.7149
10 : USD 0.5909
30 : USD 0.5308
100 : USD 0.4689
500 : USD 0.434
1000 : USD 0.4147

0
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.8288
10 : USD 0.5926
100 : USD 0.3647
500 : USD 0.3136
1000 : USD 0.2738
2500 : USD 0.2579
5000 : USD 0.242

0
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 3
Multiples : 1
3 : USD 0.4315
25 : USD 0.3895
54 : USD 0.2945
146 : USD 0.2781

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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We are delighted to provide the NTD14N03RT4G from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTD14N03RT4G and other electronic components in the MOSFETs category and beyond.

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NTD14N03R, NVD14N03R MOSFET Power, N-Channel, DPAK 14 A, 25 V Features www.onsemi.com Planar HD3e Process for Fast Switching Performance 14 AMPERES, 25 VOLTS Low R to Minimize Conduction Loss DS(on) Low C to Minimize Driver Loss R = 70.4 m (Typ) iss DS(on) Low Gate Charge D Optimized for High Side Switching Requirements in HighEfficiency DCDC Converters NVD and SVD Prefix for Automotive and Other Applications NCHANNEL G Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant S 4 MAXIMUM RATINGS (T = 25C unless otherwise specified) J 2 1 Parameter Symbol Value Unit 3 DraintoSource Voltage V 25 Vdc DPAK DSS CASE 369C GatetoSource Voltage Continuous V 20 Vdc GS (Surface Mount) STYLE 2 Thermal Resistance JunctiontoCase R 6.0 C/W JC Total Power Dissipation T = 25C P 20.8 W A D Drain Current Continuous T = 25C, Chip 14 A I A D MARKING DIAGRAM Continuous T = 25C, Limited by Package I 11.4 A A D & PIN ASSIGNMENTS Single Pulse (tp 10 s) I 28 A D Thermal Resistance, JunctiontoAmbient R 80 C/W JA 4 Drain (Note 1) Total Power Dissipation T = 25C 1.56 W P A D Drain Current Continuous T = 25C I 3.1 A A D Thermal Resistance, JunctiontoAmbient R 120 C/W JA (Note 2) Total Power Dissipation T = 25C P 1.04 W A D 1 3 Drain Current Continuous T = 25C 2.5 A 2 I A D Gate Source Drain Operating and Storage Temperature Range T , T 55 to C J stg 150 A = Assembly Location* Y = Year Maximum Lead Temperature for Soldering T 260 C L Purposes, 1/8 from case for 10 seconds WW = Work Week 14N03 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. * The Assembly Location code (A) is front side 1. When surface mounted to an FR4 board using 0.5 sq. in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad optional. In cases where the Assembly Location is size. stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 9 NTD14N03R/D AYWW T14 N03GNTD14N03R, NVD14N03R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V(br) Vdc DSS (V = 0 Vdc, I = 250 Adc) 25 28 GS D Temperature Coefficient (Positive) mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 20 Vdc, V = 0 Vdc) 1.0 DS GS (V = 20 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current I nAdc GSS (V = 20 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.5 2.0 DS GS D mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 4.5 Vdc, I = 5 Adc) 117 130 GS D (V = 10 Vdc, I = 5 Adc) 70.4 95 GS D Forward Transconductance (Note 3) g Mhos FS (V = 10 Vdc, I = 5 Adc) 7.0 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 115 pF iss Output Capacitance (V = 20 Vdc, V = 0 V, f = 1 MHz) C 62 oss DS GS Transfer Capacitance C 33 rss SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 3.8 d(on) Rise Time t 27 r (V = 10 Vdc, V = 10 Vdc, GS DD I = 5 Adc, R = 3 ) D G TurnOff Delay Time t 9.6 d(off) Fall Time t 2.0 f Gate Charge Q 1.8 nC T (V = 5 Vdc, I = 5 Adc, GS D Q 0.8 1 V = 10 Vdc) (Note 3) DS Q 0.7 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage V SD V dc (I = 5 Adc, V = 0 Vdc) (Note 3) S GS 0.93 1.2 (I = 5 Adc, V = 0 Vdc, T = 125C) S GS J 0.82 Reverse Recovery Time t 6.6 ns rr t 4.75 a (I = 5 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) (Note 3) S t 1.88 b Reverse Recovery Stored Charge Q 0.002 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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