X-On Electronics has gained recognition as a prominent supplier of NTD24N06LG MOSFETs across the USA, India, Europe, Australia, and various other global locations. NTD24N06LG MOSFETs are a product manufactured by ON Semiconductor. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

NTD24N06LG ON Semiconductor

NTD24N06LG electronic component of ON Semiconductor
NTD24N06LG ON Semiconductor
NTD24N06LG MOSFETs
NTD24N06LG  Semiconductors

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See Product Specifications
Part No. NTD24N06LG
Manufacturer: ON Semiconductor
Category: MOSFETs
Description: Trans MOSFET N-CH 60V 24A 3-Pin(2+Tab) DPAK Rail
Datasheet: NTD24N06LG Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
42: USD 0.8879 ea
Line Total: USD 37.29 
Availability - 0
MOQ: 42  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Thu. 05 Jun to Wed. 11 Jun
MOQ : 42
Multiples : 1
42 : USD 0.8879
100 : USD 0.6868

   
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NTD24N06L, STD24N06L Power MOSFET 24 Amps, 60 Volts Logic Level, NChannel DPAK Designed for low voltage, high speed switching applications in NTD24N06L, STD24N06L ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 71.9 GS D Temperature Coefficient (Positive) 69.6 mV/C Zero Gate Voltage Drain Current I Adc DSS 1.0 (V = 60 Vdc, V = 0 Vdc) DS GS 10 (V = 60 Vdc, V = 0 Vdc, T = 150C) DS GS J GateBody Leakage Current (V = 15 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.7 2.0 DS GS D 5.0 mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 5.0 Vdc, I = 10 Adc) 36 45 GS D 36 (V = 5.0 Vdc, I = 12 Adc) GS D Static DraintoSource OnResistance (Note 3) V Vdc DS(on) (V = 5.0 Vdc, I = 20 Adc) 0.9 1.2 GS D (V = 5.0 Vdc, I = 24 Adc) 0.9 GS D 0.78 (V = 5.0 Vdc, I = 12 Adc, T = 150C) GS D J Forward Transconductance (Note 3) (V = 7.0 Vdc, I = 12 Adc) g 19 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 814 1140 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 258 360 oss f = 1.0 MHz) Transfer Capacitance C 80 115 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 9.4 20 ns d(on) (V = 30 Vdc, I = 24 Adc, DD D Rise Time t 97 200 r V = 5.0 Vdc, GS Turn Off Delay Time t 23 50 R = 9.1 ) (Note 3) d(off) G Fall Time t 52 100 f Gate Charge nC Q 16 32 T (V = 48 Vdc, I = 24 Adc, DS D Q 3.4 1 V = 5.0 Vdc) (Note 3) GS Q 11 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 20 Adc, V = 0 Vdc) (Note 3) V 0.93 1.1 Vdc S GS SD (I = 24 Adc, V = 0 Vdc) 0.95 S GS (I = 24 Adc, V = 0 Vdc, T = 150C) 0.86 S GS J Reverse Recovery Time ns t 49 rr (I = 24 Adc, V = 0 Vdc, S GS t 30 a dI /dt = 100 A/ s) (Note 3) S t 20 b Reverse Recovery Stored Charge Q 0.084 C RR 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Device Package Shipping NTD24N06LT4G DPAK 2500 / Tape & Reel (Pb Free) STD24N06LT4G DPAK 2500 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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