Product Information

NTD4813NHT4G

NTD4813NHT4G electronic component of ON Semiconductor

Datasheet
Trans MOSFET N-CH 30V 9A 3-Pin(2+Tab) DPAK T/R
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.6808 ea
Line Total: USD 0.68

1694 - Global Stock
Ships to you between
Tue. 04 Jun to Thu. 06 Jun
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
1681 - WHS 1


Ships to you between Tue. 04 Jun to Thu. 06 Jun

MOQ : 1
Multiples : 1

Stock Image

NTD4813NHT4G
ON Semiconductor

1 : USD 0.6808
10 : USD 0.5968
100 : USD 0.4163
500 : USD 0.3588
1000 : USD 0.322
2500 : USD 0.2783
5000 : USD 0.276
10000 : USD 0.276
25000 : USD 0.2668

Read More Specifications

     
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Operating Temperature Classification
Number Of Elements
Mounting
Operating Temp Range
Pin Count
Gate-Source Voltage Max
Power Dissipation
Rad Hardened
Drain-Source On-Volt
Polarity
Type
Package Type
Configuration
Height
Length
Product
Series
Transistor Type
Width
Brand
Cnhts
Fall Time
Hts Code
Mxhts
Product Type
Rise Time
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
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Additional Infomation About Product

NTD4813NH, NVD4813NH MOSFET Power, Single, N-Channel, DPAK/IPAK 30 V, 40 A Features NTD4813NH, NVD4813NH MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche EAS 44.4 mJ Energy (V = 24 V, V = 10 V, DD GS I = 17.2 A , L = 0.3 mH, R = 25 L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

Aptina / ON Semiconductor
FAIRCHILD
FAIRCHILD (ON SEMICONDUCTOR)
Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
ON Semiconductor / Fairchild
ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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