NTD18N06 Power MOSFET 18 Amps, 60 Volts N Channel DPAK Designed for low voltage, high speed switching applications in NTD18N06 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V (BR)DSS (V = 0 Vdc, I = 250 Adc) 60 70.8 Vdc GS D 68.8 mV/C Temperature Coefficient (Positive) Zero Gate Voltage Drain Current I Adc DSS (V = 60 Vdc, V = 0 Vdc) 1.0 DS GS (V = 60 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V GS(th) (V = V , I = 250 Adc) 2.0 3.1 4.0 Vdc DS GS D Threshold Temperature Coefficient (Negative) 7.0 mV/C Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 10 Vdc, I = 9.0 Adc) 51 60 GS D Static DraintoSource OnResistance (Note 3) V Vdc DS(on) (V = 10 Vdc, I = 18 Adc) 0.91 1.3 GS D (V = 10 Vdc, I = 9.0 Adc, T = 150C) 0.85 GS D J Forward Transconductance (Note 3) (V = 7.0 Vdc, I = 9.0 Adc) g 10.1 mhos DS D FS DYNAMIC CHARACTERISTICS Input Capacitance C 509 710 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 162 230 oss f = 1.0 MHz) Transfer Capacitance C 47 100 rss SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 12 25 ns d(on) (V = 30 Vdc, I = 18 Adc, Rise Time t 23 50 DD D r V = 10 Vdc, GS Turn Off Delay Time t 19 40 R = 9.1 ) (Note 3) d(off) G Fall Time t 20 40 f Gate Charge Q 15.3 30 nC T (V = 48 Vdc, I = 18 Adc, DS D Q 3.2 1 V = 10 Vdc) (Note 3) GS Q 7.3 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage (I = 18 Adc, V = 0 Vdc) (Note 3) V 0.98 1.15 Vdc S GS SD (I = 18 Adc, V = 0 Vdc, T = 150C) 0.87 S GS J Reverse Recovery Time t 42 ns rr (I = 18 Adc, V = 0 Vdc, S GS t 31 a dI /dt = 100 A/ s) (Note 3) S t 11 b Reverse Recovery Stored Charge Q 0.066 C RR 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.