Product Information

NTD3055L170T4G

NTD3055L170T4G electronic component of ON Semiconductor

Datasheet
MOSFET 60V 9A N-Channel

Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.8703 ea
Line Total: USD 0.87

2 - Global Stock
Ships to you between
Tue. 28 May to Fri. 31 May
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2214 - WHS 1


Ships to you between
Tue. 28 May to Fri. 31 May

MOQ : 1
Multiples : 1

Stock Image

NTD3055L170T4G
ON Semiconductor

1 : USD 0.6527
10 : USD 0.5358
30 : USD 0.4855
100 : USD 0.4251
500 : USD 0.3606
1000 : USD 0.3425

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Forward Transconductance - Min
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
Brand Category
LoadingGif

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The NTD3055L170T4G with MOSFET 60V 9A N-Channel manufactured by ON Semiconductor is a Power MOSFET with a 60V maximum voltage rating, a 9A maximum current rating and a maximum drain-source resistance (RDS(ON)) of 1.7O. It is a N-Channel MOSFET, meaning that it is able to control the flow of current with a gate voltage. The low ON resistance combined with fast switching speeds make this part perfect for high frequency switching applications. The NTD3055L170T4G is provided in a P-channel package with an exposed pad for high-speed thermal dissipation. It also has an impressive low gate charge of just 3.0nC, making it ideal for use in high voltage applications.

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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