NTD5802NT4G ON Semiconductor

NTD5802N, NVD5802N MOSFET Power, Single, N-Channel, DPAK 40 V, 101 A Features NTD5802N, NVD5802N THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 1.6 C/W JC JunctiontoAmbient Steady State (Note 1) R 60 JA JunctiontoAmbient Steady State (Note 2) R 105 JA 1. Surfacemounted on FR4 board using 1 in sq pad size, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 40 V V = 0 V, I = 10 A (BR)DSS GS D DraintoSource Breakdown Voltage V /T 40 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 40 V DS T = 150C 50 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 1.5 3.5 V GS(TH) GS DS D Negative Threshold Temperature Co- V /T 7.4 mV/C GS(TH) J efficient DraintoSource On Resistance R V = 10 V, I = 50 A 3.6 4.4 m DS(on) GS D V = 5.0 V, I = 50 A 6.5 7.8 GS D Forward Transconductance gFS V = 15 V, I = 15 A 16.8 S DS D CHARGES AND CAPACITANCES Input Capacitance C 5300 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 850 oss V = 12 V DS Reverse Transfer Capacitance C 550 rss Input Capacitance C V = 0 V, f = 1.0 MHz, 5025 pF GS iss V = 25 V DS Output Capacitance C 580 oss Reverse Transfer Capacitance C 400 rss Total Gate Charge Q 75 100 nC G(TOT) Threshold Gate Charge Q 6.0 G(TH) V = 10 V, V = 15 V, GS DS I = 50 A D GatetoSource Charge Q 18 GS GatetoDrain Charge Q 15 GD SWITCHING CHARACTERISTICS (Note 4) TurnOn Delay Time t 14 ns d(on) Rise Time t 52 r V = 10 V, V = 20 V, GS DS I = 50 A, R = 2.0 D G TurnOff Delay Time t 39 d(off) Fall Time t 8.5 f Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures.