C1M NTHC5513 MOSFET Power, Complementary ChipFET 20 V, +3.9 A / -3.0 A Features Complementary NChannel and PChannel MOSFET www.onsemi.com Small Size, 40% Smaller than TSOP6 Package V R TYP I MAX Leadless SMD Package Featuring Complementary Pair (BR)DSS DS(on) D ChipFET Package Provides Great Thermal Characteristics Similar to 60 m 4.5 V NChannel 3.9 A 20 V Larger Packages 80 m 2.5 V Low R in a ChipFET Package for High Efficiency Performance 130 m 4.5 V DS(on) PChannel 3.0 A 20 V Low Profile (< 1.10 mm) Allows Placement in Extremely Thin 200 m 2.5 V Environments Such as Portable Electronics These Devices are PbFree, Halogen Free/BFR Free and are RoHS S D 1 2 Compliant Applications Load Switch Applications Requiring Level Shift G G 2 DCDC Conversion Circuits 1 Drive Small Brushless DC Motors D S Designed for Power Management Applications in Portable, Battery 2 1 Powered Products NChannel MOSFET PChannel MOSFET MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit ChipFET CASE 1206A DraintoSource Voltage V 20 V DSS STYLE 2 GatetoSource Voltage V 12 V GS Continuous Drain NCh T = 25C I 2.9 A A D PIN MARKING Current (Note 1) Steady CONNECTIONS DIAGRAM T = 85C 2.1 State A t 5 T = 25C 3.9 A 8 1 D S 1 8 1 1 PCh T = 25C I 2.2 A A D Steady 7 2 2 7 D G 1 1 T = 85C 1.6 State A 6 3 D S 3 6 2 2 t 5 T = 25C 3.0 A D 5 4 G 4 5 Pulsed Drain Current NCh t = 10 s I 12 A 2 2 DM (Note 1) PCh t = 10 s 9.0 C1 = Specific Device Code Power Dissipation Steady P 1.1 W D T = 25C A M = Month Code (Note 1) State = PbFree Package t 5 T = 25C 2.1 A Operating Junction and Storage T , 55 to C J ORDERING INFORMATION Temperature T 150 STG Device Package Shipping Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 seconds) NTHC5513T1G ChipFET 3000/Tape & Reel Stresses exceeding those listed in the Maximum Ratings table may damage the (PbFree) device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please 1. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq refer to our Tape and Reel Packaging Specifications 1 oz including traces). Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 5 NTHC5513/DNTHC5513 THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient (Note 1) Steady State R 110 C/W JA T = 25C A t 5 60 2. Surface Mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol N/P Test Conditions Min Typ Max Unit OFF CHARACTERISTICS (Note 3) DraintoSource Breakdown Voltage V N I = 250 A 20 V (BR)DSS D V = 0 V GS P I = 250 A 20 D Zero Gate Voltage Drain Current I N V = 0 V, V = 16 V 1.0 A DSS GS DS P V = 0 V, V = 16 V 1.0 GS DS N V = 0 V, V = 16 V, T = 85 C 5 GS DS J P V = 0 V, V = 16 V, T = 85 C 5 GS DS J GatetoSource Leakage Current I V = 0 V, V = 12 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V N I = 250 A 0.6 1.2 V GS(TH) D V = V GS DS P I = 250 A 0.6 1.2 D DraintoSource On Resistance R (on) N V = 4.5 V , I = 2.9 A 0.058 0.080 DS GS D P V = 4.5 V , I = 2.2 A 0.130 0.155 GS D N V = 2.5 V , I = 2.3 A 0.077 0.115 GS D P V = 2.5 V, I = 1.7 A 0.200 0.240 GS D Forward Transconductance g N V = 10 V, I = 2.9A 6.0 S FS DS D P V = 10 V , I = 2.2 A 6.0 DS D CHARGES AND CAPACITANCES Input Capacitance C N V = 10 V 180 pF ISS DS P V = 10 V 185 DS Output Capacitance C N V = 10 V 80 OSS DS f = 1 MHz, V = 0 V GS P V = 10 V 95 DS Reverse Transfer Capacitance C N V = 10 V 25 RSS DS P V = 10 V 30 DS Total Gate Charge Q nC N V = 4.5 V, V = 10 V, I = 2.9 A 2.6 4.0 G(TOT) GS DS D P V = 4.5 V, V = 10 V, I = 2.2 A 3.0 6.0 GS DS D GatetoSource Gate Charge Q N V = 4.5 V, V = 10 V, I = 2.9 A 0.6 GS GS DS D P V = 4.5 V, V = 10 V, I = 2.2 A 0.5 GS DS D GatetoDrain Miller Charge Q N V = 4.5 V, V = 10 V, I = 2.9 A 0.7 GD GS DS D P V = 4.5 V, V = 10 V, I = 2.2 A 0.9 GS DS D Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 250 s, Duty Cycle 2%. www.onsemi.com 2