NTHS4166NT1G ON Semiconductor

NTHS4166N MOSFET Power, Single, N-Channel, ChipFET Package 30 V, 8.2 A NTHS4166N 1. Surface Mounted on FR4 Board using 1 in sq. pad, 1 oz Cu. 2. Surface Mounted on FR4 Board using the minimum recommended pad size. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) 86 C/W R JA JunctiontoAmbient t 5 s (Note 3) R 57 JA JunctiontoAmbient t 5 s (Note 4) R 155 JA JunctiontoFoot (Drain) Steady State (Note 3) R 20 JF 3. Surface Mounted on FR4 Board using 1 in sq. pad, 1 oz Cu. 4. Surface Mounted on FR4 Board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 18.3 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, V = 30 V A T = 25C 1.0 DSS GS DS J T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.1 2.3 V GS(TH) GS DS D Negative Threshold V /T 5.5 mV/C GS(TH) J Temperature Coefficient DraintoSource OnResistance R m V = 10 V, I = 4.9 A 18 22 DS(on) GS D V = 4.5 V, I = 3.7 A 23 27 GS D Forward Transconductance g V = 5 V, I = 4.9 A 9.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 900 pF ISS Output Capacitance C V = 0 V, f = 1.0 MHz, V = 15 V 210 OSS GS DS Reverse Transfer Capacitance C 140 RSS nC Total Gate Charge Q 9.2 G(TOT) Threshold Gate Charge Q 0.85 G(TH) V = 4.5 V, V = 15 V, I = 4.9 A GS DS D GatetoSource Charge Q 2.86 GS GatetoDrain Charge Q 3.84 GD Total Gate Charge Q V = 10 V, V = 15 V, I = 4.9 A 18 nC G(TOT) GS DS D Gate Resistance R 1.6 G SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 12 ns d(on) Rise Time t 13 r V = 4.5 V, V = 15 V, GS DS I = 4.9 A, R = 3.0 D G TurnOff Delay Time t 16 d(off) Fall Time t 5.0 f ns TurnOn Delay Time t 8.0 d(on) Rise Time t 11 r V = 10 V, V = 15 V, GS DS I = 4.9 A, R = 3.0 D G TurnOff Delay Time t 20 d(off) Fall Time t 4.0 f 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.