NTJD4105C MOSFET Small Signal, Complementary, SC-88 20 V / -8.0 V, +0.63 A / -0.775 A Features Complementary N and P Channel Device NTJD4105C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol N/P Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource V N I = 250 A 20 27 V (BR)DSS D V = 0 V GS Breakdown Voltage P I = 250 A 8.0 10.5 D DraintoSource Breakdown V N 22 mV/ C (BR)DSS Voltage Temperature Coeffi- / T J P 6.0 cient Zero Gate Voltage Drain Cur- I N V = 0 V, V = 16 V 1.0 A DSS GS DS T = 25 C J rent P V = 0 V, V = 6.4 V 1.0 GS DS GatetoSource I N V = 12 V 10 A GSS GS V = 0 V DS Leakage Current P V = 8.0 10 GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V N I = 250 A 0.6 0.92 1.5 V GS(TH) D V = V GS DS P I = 250 A 0.45 0.83 1.0 D Gate Threshold V / N 2.1 mV/ C GS(TH) Temperature Coefficient T J P 2.2 DraintoSource On Resist- R N V = 4.5 V I = 0.63 A 0.29 0.375 DS(on) GS D ance P V = 4.5 V, I = 0.57 A 0.22 0.30 GS D N V = 2.5 V, I = 0.40 A 0.36 0.445 GS D P V = 2.5 V, I = 0.48 A 0.32 0.46 GS D P V = 1.8 V, I = 0.20 A 0.51 0.90 GS D Forward Transconductance g N V = 4.0 V I = 0.63 A 2.0 S FS DS D P V = 4.0 V, I = 0.57 A 2.0 DS D CHARGES AND CAPACITANCES Input Capacitance C N V = 20 V 33 46 pF ISS DS P V = 8.0V 160 225 DS Output Capacitance C N V = 20 V 13 22 OSS DS f = 1 MHz, V = 0 V GS P V = 8.0 V 38 55 DS Reverse Transfer Capacitance C N V = 20 V 2.8 5.0 RSS DS P V = 8.0 V 28 40 DS Total Gate Charge Q N V = 4.5 V, V = 10 V, I = 0.7 A 1.3 3.0 nC G(TOT) GS DS D P V = 4.5 V, V = 5.0 V, I = 0.6 A 2.2 4.0 GS DS D Threshold Gate Charge Q N V = 4.5 V, V = 10 V, I = 0.7 A 0.1 G(TH) GS DS D P V = 4.5 V, V = 5.0 V, I = 0.6 A 0.1 GS DS D GatetoSource Charge Q N V = 4.5 V, V = 10 V, I = 0.7 A 0.2 GS GS DS D P V = 4.5 V, V = 5.0 V, I = 0.6 A 0.5 GS DS D GatetoDrain Charge Q N V = 4.5 V, V = 10 V, I = 0.7 A 0.4 GD GS DS D P V = 4.5 V, V = 5.0 V, I = 0.6 A 0.5 GS DS D SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t N 0.083 s d(ON) Rise Time t 0.227 V = 4.5 V, V = 10 V, r GS DD I = 0.5 A, R = 20 TurnOff Delay Time t D G 0.786 d(OFF) Fall Time t 0.506 f TurnOn Delay Time t P 0.013 d(ON) Rise Time t V = 4.5 V, V = 4.0 V, 0.023 r GS DD I = 0.5 A, R = 8.0 TurnOff Delay Time t D G 0.050 d(OFF) Fall Time t 0.036 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V N I = 0.23 A 0.76 1.1 V SD S V = 0 V, T = 25C GS J P I = 0.23 A 0.76 1.1 S N I = 0.23 A 0.63 S V = 0 V, T = 125C GS J P I = 0.23 A 0.63 S Reverse Recovery Time t N I = 0.23 A 0.410 s RR V = 0 V, S GS d /d = 90 A/ s P IS t I = 0.23 A 0.078 S 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures.