MOSFET Power, P-Channel, Schottky Diode, Cool 2x2 mm -20 V, -4.1 A, 2.0 A NTLJF3117P www.onsemi.com Features FETKY Configuration with MOSFET plus Low Vf Schottky Diode MOSFET COOL Package Provides Exposed Drain Pad for Excellent V R MAX I MAX (Note 1) (BR)DSS DS(on) D Thermal Conduction 100 m 4.5 V 2x2 mm Footprint Same as SC88 Package Design 20 V 135 m 2.5 V 4.1 A Independent Pinout Provides Circuit Design Flexibility Low Profile (< 0.8 mm) for Easy Fit in Thin Environment 200 m 1.8 V High Current Schottky Diode: 2 A Current Rating SCHOTTKY DIODE This is a PbFree Device V MAX V TYP I MAX R F F Applications 30 V 0.47 V 2.0 A Optimized for Portable Applications like Cell Phones, Digital Cameras, Media Players, etc. DCDC Buck Circuit D A LiIon Battery Applications Color Display and Camera Flash Regulators G MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit S K DraintoSource Voltage V 20 V DSS PCHANNEL MOSFET SCHOTTKY DIODE GatetoSource Voltage V 8.0 V GS Continuous Drain I A T = 25C 3.3 D Steady A MARKING Current (Note 1) State T = 85C 2.4 A DIAGRAM t 5 s T = 25C 4.1 A 1 6 WDFN6 JHM Power Dissipation Steady P 1.5 W 2 5 D CASE 506AN (Note 1) 3 4 State T = 25C 1 A t 5 s 2.3 JH = Specific Device Code Continuous Drain I A T = 25C 2.3 A D M = Date Code Current (Note 2) = PbFree Package T = 85C 1.6 Steady A State (Note: Microdot may be in either location) Power Dissipation P 0.71 W D T = 25C A (Note 2) PIN CONNECTIONS Pulsed Drain Current t = 10 s I 20 A p DM Operating Junction and Storage Temperature T , T 55 to C J STG 150 K A K 1 6 Source Current (Body Diode) (Note 2) I 1.9 A S Lead Temperature for Soldering Purposes T 260 C L N/C G (1/8 from case for 10 s) 2 5 Stresses exceeding those listed in the Maximum Ratings table may damage the D device. If any of these limits are exceeded, device functionality should not be D 3 4 S assumed, damage may occur and reliability may be affected. 1. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 1 oz including traces). (Top View) 2. Surface Mounted on FR4 Board using the minimum recommended pad size 2 of 30 mm , 2 oz Cu. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 7 of this data sheet. Semiconductor Components Industries, LLC, 2006 1 Publication Order Number: February, 2021 Rev. 3 NTLJF3117P/DNTLJF3117P SCHOTTKY DIODE MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit Peak Repetitive Reverse Voltage V 30 V RRM DC Blocking Voltage V 30 V R Average Rectified Forward Current I 2.0 A F THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit JunctiontoAmbient Steady State (Note 3) R 83 JA JunctiontoAmbient t 5 s (Note 3) R 54 C/W JA JunctiontoAmbient Steady State Min Pad (Note 4) R 177 JA 3. Surface Mounted on FR4 Board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface Mounted on FR4 Board using the minimum recommended pad size of 30 mm , 2 oz Cu. MOSFET ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V 20 V V = 0 V, I = 250 A (BR)DSS GS D DraintoSource Breakdown Voltage V /T I = 250 A, Ref to 25C 9.95 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 16 V, V = 0 V DS GS T = 85C 10 J GatetoSource Leakage Current I V = 0 V, V = 8.0 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 0.7 1.0 V GS(TH) GS DS D Negative Threshold V /T 2.44 mV/C GS(TH) J Temperature Coefficient DraintoSource OnResistance R V = 4.5, I = 2.0 A 75 100 m DS(on) GS D V = 2.5, I = 2.0 A 101 135 GS D V = 1.8, I = 1.6 A 150 200 GS D Forward Transconductance g V = 5.0 V, I = 2.0 A 3.1 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCE Input Capacitance C 531 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 91 OSS V = 10 V DS Reverse Transfer Capacitance C 56 RSS Total Gate Charge Q 5.5 6.2 nC G(TOT) Threshold Gate Charge Q 0.7 G(TH) V = 4.5 V, V = 10 V, GS DS GatetoSource Charge Q 1.0 GS I = 2.0 A D GatetoDrain Charge Q 1.4 GD Gate Resistance R 8.8 G SWITCHING CHARACTERISTICS (Note 6) TurnOn Delay Time t 5.2 ns d(ON) Rise Time t 13.2 r V = 4.5 V, V = 5.0 V, GS DD I = 1.0 A, R = 6.0 D G TurnOff Delay Time t 13.7 d(OFF) Fall Time t 19.1 f 5. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2