NTLLD4901NF MOSFET Power, Dual, N-Channel with Integrated Schottky WDFN, (3 mm x 3 mm) NTLLD4901NF MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage Q1 V 30 V DSS DraintoSource Voltage Q2 V 20 V GatetoSource Voltage Q1 GS GatetoSource Voltage Q2 Continuous Drain Current R (Note 1) T = 25C Q1 I 8.3 JA A D T = 85C 6.0 A A T = 25C Q2 9.6 A T = 85C 6.9 A Power Dissipation T = 25C Q1 P 1.82 W A D R JA (Note 1) Q2 1.88 Continuous Drain Current R 10 s (Note 1) T = 25C Q1 I 11 JA A D T = 85C 8 A A T = 25C Q2 13 A Steady State T = 85C 9.1 A Power Dissipation T = 25C Q1 P 3.23 W A D R 10 s (Note 1) JA Q2 3.27 Continuous Drain Current T = 25C Q1 I 5.5 A D R (Note 2) JA T = 85C 4.0 A A T = 25C Q2 6.3 A T = 85C 4.5 A Power Dissipation T = 25 C Q1 P 0.80 W A D R (Note 2) JA Q2 0.81 Pulsed Drain Current TA = 25C Q1 I 65 A DM tp = 10 s Q2 70 Operating Junction and Storage Temperature T , T 55 to +150 C Q1 J STG Q2 Source Current (Body Diode) Q1 I 4.2 A S Q2 6.0 Drain to Source DV/DT dV/dt 6 V/ns Single Pulse DraintoSource Avalanche Energy (T = 25C, V = 50 V, Q1 EAS 12 mJ J DD V = 10 V, I = 9.0 A , L = 0.3 mH, R = 25 ) GS L pk G Single Pulse DraintoSource Avalanche Energy (T = 25C, V = 50 V, Q2 EAS 13.5 J DD V = 10 V, I = 9.5 A , L = 0.3 mH, R = 25 ) GS L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu 2 2. Surfacemounted on FR4 board using the minimum recommended pad size of 90 mm