NTLUF4189NZ Power MOSFET and Schottky Diode 30 V, NChannel with 0.5 A Schottky Barrier Diode, 1.6 x 1.6 x 0.55 mm Cool Package Features NTLUF4189NZ DEVICE ORDERING INFORMATION Device Package Shipping NTLUF4189NZTAG UDFN6 3000 / Tape & Reel (Pb Free) NTLUF4189NZTBG UDFN6 3000 / Tape & Reel (Pb Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Schottky Diode Maximum Ratings (T = 25C unless otherwise stated) J Parameter Symbol Value Units Peak Repetitive Reverse Voltage V 30 V RRM DC Blocking Voltage V 30 V R Average Rectified Forward Current I 0.5 A F Thermal Resistance Ratings Parameter Symbol Max Units Junction-to-Ambient Steady State (Note 3) R 155 C/W JA Junction-to-Ambient t 5 s (Note 3) R 100 JA Junction-to-Ambient Steady State min Pad (Note 4) R 245 JA MOSFET Electrical Characteristics (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 22 mV/C I = 250 A, ref to 25C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 24 V DS T = 85C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 10 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.1 1.5 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 3.0 mV/C GS(TH) J DraintoSource On Resistance R V = 4.5 V, I = 1.5 A 145 200 m DS(on) GS D V = 3.0 V, I = 0.5 A 185 250 GS D V = 2.5 V, I = 0.5 A 220 350 GS D Forward Transconductance g V = 4.0 V, I = 0.15 A 1.1 S FS DS D CHARGES & CAPACITANCES Input Capacitance C 95 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 15 OSS V = 15 V DS Reverse Transfer Capacitance C 10 RSS Total Gate Charge Q 1.4 3.0 nC G(TOT) Threshold Gate Charge Q 0.2 G(TH) V = 4.5 V, V = 15 V GS DS I = 1.5 A D Gate-to-Source Charge Q 0.4 GS Gate-to-Drain Charge Q 0.4 GD 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces) 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. 5. Pulse Test: pulse width 300 s, duty cycle 2% 6. Switching characteristics are independent of operating junction temperatures