NTLUD3A260PZ MOSFET Power, Dual, P-Channel, ESD, Cool, UDFN, 1.6X1.6X0.55 mm -20 V, -2.1 A NTLUD3A260PZ THERMAL RESISTANCE RATINGS Parameter Symbol Max Units Junction-to-Ambient Steady State (Note 3) R 155 C/W JA Junction-to-Ambient t 5 s (Note 3) R 100 JA Junction-to-Ambient Steady State min Pad (Note 4) 245 R JA ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 10 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I A T = 25C 1.0 DSS J V = 0 V, GS V = 20 V DS T = 125C 10 J Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 10 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 2.8 mV/C GS(TH) J Drain-to-Source On Resistance R V = 4.5 V, I = 2.0 A 160 200 m DS(on) GS D V = 2.5 V, I = 1.2 A 226 290 GS D V = 1.8 V, I = 0.24 A 300 390 GS D V = 1.5 V, I = 0.18 A 390 650 GS D Forward Transconductance g V = 10 V, I = 1.5 A 3.7 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance C 300 pF ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 34 OSS V = 10 V DS Reverse Transfer Capacitance C 29 RSS nC Total Gate Charge Q 4.2 G(TOT) Threshold Gate Charge Q 0.3 G(TH) V = 4.5 V, V = 10 V GS DS I = 1.7 A Gate-to-Source Charge Q D 0.7 GS Gate-to-Drain Charge Q 1.1 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) ns Turn-On Delay Time t 17.4 d(ON) Rise Time t 32.3 r V = 4.5 V, V = 10 V, GS DD I = 1.5 A, R = 1 Turn-Off Delay Time t D G 149 d(OFF) Fall Time t 74 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD V T = 25C 0.8 1.2 J V = 0 V, GS I = 0.6 A S T = 125C 0.68 J Reverse Recovery Time t 10.6 ns RR Charge Time t 8.7 a V = 0 V, dis/dt = 100 A/ s, GS I = 1.0 A Discharge Time t S 1.9 b Reverse Recovery Charge Q 5.1 nC RR 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.