NTMFD4C20N MOSFET Power, Dual, N-Channel, SO8FL 30 V, High Side 18 A / Low Side 27 A Features www.onsemi.com CoPackaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances V R MAX I MAX (BR)DSS DS(ON) D Optimized Devices to Reduce Power Losses 7.3 m 10 V Q1 Top FET 18 A These Devices are PbFree, Halogen Free/BFR Free and are RoHS 30 V 10.8 m 4.5 V Compliant Q2 Bottom 3.4 m 10 V Applications 27 A FET 5.2 m 4.5 V 30 V DCDC Converters System Voltage Rails D1 (2, 3, 4, 9) Point of Load (1) G1 S1/D2 (10) (8) G2 S2 (5, 6, 7) PIN CONNECTIONS D1 4 5 S2 D1 3 6 S2 9 10 D1 S1/D2 D1 2 7 S2 G1 1 8 G2 (Bottom View) MARKING DIAGRAM 1 DFN8 4C20N CASE 506BX AYWZZ 1 4C20N = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2013 1 Publication Order Number: May, 2019 Rev. 4 NTMFD4C20N/DNTMFD4C20N MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit DraintoSource Voltage Q1 V 30 V DSS DraintoSource Voltage Q2 V 20 V GatetoSource Voltage Q1 GS GatetoSource Voltage Q2 Continuous Drain Current R (Note 1) T = 25C Q1 I 12 JA A D T = 85C 8.6 A A T = 25C Q2 18 A T = 85C 13 A Power Dissipation T = 25C Q1 P 1.88 W A D R JA (Note 1) Q2 1.97 Continuous Drain Current R 10 s (Note 1) T = 25C Q1 I 18.2 JA A D T = 85C 13.1 A A T = 25C Q2 27.4 A Steady State T = 85C 19.8 A Power Dissipation T = 25C Q1 P 4.37 W A D R 10 s (Note 1) JA Q2 4.6 Continuous Drain Current T = 25C Q1 I 9.1 A D R (Note 2) JA T = 85C 6.6 A A T = 25C Q2 13.7 A T = 85C 9.9 A Power Dissipation T = 25 C Q1 P 1.09 W A D R (Note 2) JA Q2 1.15 Pulsed Drain Current TA = 25C Q1 I 55 A DM tp = 10 s Q2 82 Operating Junction and Storage Temperature T , T 55 to +150 C Q1 J STG Q2 Source Current (Body Diode) Q1 I 4.0 A S Q2 4.2 Drain to Source DV/DT dV/dt 6 V/ns Single Pulse DraintoSource Avalanche Energy (T = 25C, V I = 18 A Q1 EAS 16 mJ J DD L pk = 50 V, V = 10 V, L = 0.1 mH, R = 25 ) GS G I = 29 A Q2 EAS 42 L pk Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu. 2 2. Surfacemounted on FR4 board using the minimum recommended pad size of 100 mm . www.onsemi.com 2