NTLUS4930NTBG ON Semiconductor

NTLUS4930N MOSFET Power, Single, N-Channel, Cool, UDFN6, 2.0x2.0x0.55 mm 30 V, 6.1 A NTLUS4930N THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient Steady State (Note 3) R 75.7 JA Junction-to-Ambient t 5 s (Note 3) R 32.9 C/W JA Junction-to-Ambient Steady State min Pad (Note 4) R 191.4 JA 3. Surface-mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq 2 oz including traces). 2 4. Surface-mounted on FR4 board using the minimum recommended pad size of 30 mm , 2 oz. Cu. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C +16 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 24 V DS Gate-to-Source Leakage Current I V = 0 V, V = 20 V 10 A GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V V = V , I = 250 A 1.2 1.8 2.2 V GS(TH) GS DS D Negative Threshold Temp. Coefficient V /T 4.4 mV/C GS(TH) J Drain-to-Source On Resistance R m V = 10 V, I = 6.1 A 19 28.5 DS(on) GS D V = 4.5 V, I = 5.5 A 27 36 GS D Forward Transconductance g V = 1.5 V, I = 6.0 A 16 S FS DS D CHARGES, CAPACITANCES & GATE RESISTANCE pF Input Capacitance C 476 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 197 OSS V = 15 V DS Reverse Transfer Capacitance C 100 RSS Total Gate Charge Q 4.8 nC G(TOT) Threshold Gate Charge Q 0.4 G(TH) V = 4.5 V, V = 15 V GS DS I = 5.5 A D Gate-to-Source Charge Q 1.54 GS Gate-to-Drain Charge Q 2.15 GD Q V = 10 V, V = 15 V 8.7 nC G(TOT) GS DS I = 5.5 A D SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 6) ns Turn-On Delay Time t 8.7 d(ON) Rise Time t 14.4 r V = 4.5 V, V = 15 V, GS DD I = 5.5 A, R = 3 D G Turn-Off Delay Time t 9.1 d(OFF) Fall Time t 3.3 f SWITCHING CHARACTERISTICS, VGS = 10 V (Note 6) ns Turn-On Delay Time t 4.1 d(ON) Rise Time t 12.2 r V = 10 V, V = 15 V, GS DD I = 6.1 A, R = 3 D G Turn-Off Delay Time t 11.6 d(OFF) Fall Time t 2.2 f DRAIN-SOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V T = 25C 0.80 1.0 SD J V = 0 V, GS I = 1.65 A S T = 125C 0.67 J 5. Pulse Test: pulse width 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures.