NTMFS4C024N MOSFET Power, Single, N-Channel, SO-8 FL 30 V, 78 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses V R MAX I MAX (BR)DSS DS(ON) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 2.8 m 10 V 30 V 78 A Compliant 4.0 m 4.5 V Applications CPU Power Delivery D (58) DCDC Converters MAXIMUM RATINGS (T = 25C unless otherwise stated) J G (4) Parameter Symbol Value Unit DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V S (1,2,3) GS Continuous Drain T = 25C I 21.7 A NCHANNEL MOSFET A D Current R (Note 1) JA T = 80C 16.3 A MARKING Power Dissipation T = 25C P 2.57 W A D DIAGRAMS R (Note 1) JA Continuous Drain T = 25C I 34.8 A D A D Current R 10 s JA S D T = 80C 26.0 A (Note 1) SO8 FLAT LEAD 4C024 S CASE 488AA Power Dissipation T = 25C P 6.6 W A D AYWZZ S STYLE 1 R 10 s (Note 1) Steady JA G D State 1 Continuous Drain T = 25C I 11.9 A A D D Current R (Note 2) JA T = 80C 8.9 A A = Assembly Location Power Dissipation T = 25C P 0.77 W A D Y = Year R (Note 2) JA W = Work Week Continuous Drain T = 25C I 78 A C D ZZ = Lot Traceabililty Current R (Note 1) JC T =80C 58 C Power Dissipation T = 25C P 33 W C D ORDERING INFORMATION R (Note 1) JC Pulsed Drain Current T = 25C, t = 10 s I 174 A A p DM Device Package Shipping Current Limited by Package T = 25C I 80 A A Dmax NTMFS4C024NT1G SO8 FL 1500 / Operating Junction and Storage Temperature T , 55 to C J (PbFree) Tape & Reel T +150 STG NTMFS4C024NT3G SO8 FL 5000 / Source Current (Body Diode) I 30 A S (PbFree) Tape & Reel Drain to Source dV/dt dV/d 7.0 V/ns t For information on tape and reel specifications, Single Pulse DraintoSource Avalanche E 84 mJ AS including part orientation and tape sizes, please Energy (T = 25C, V = 20 V, I = 41 A , J GS L pk refer to our Tape and Reel Packaging Specifications L = 0.1 mH, R = 25 ) (Note 3) GS Brochure, BRD8011/D. Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 2. Surfacemounted on FR4 board using the minimum recommended pad size. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 1 NTMFS4C024N/DNTMFS4C024N 3. This is the absolute maximum ratings. Parts are 100% tested at T = 25C, J V = 20 V, I = 29 A, E = 42 mJ. GS L AS THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) R 3.8 JC JunctiontoAmbient Steady State (Note 4) R 48.6 JA C/W JunctiontoAmbient Steady State (Note 5) R 161.7 JA JunctiontoAmbient (t 10 s) (Note 4) R 19 JA 4. Surfacemounted on FR4 board using 1 sqin pad, 1 oz Cu. 5. Surfacemounted on FR4 board using the minimum recommended pad size. ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V V = 0 V, I = 12.6 A, 34 (BR)DSSt GS D(aval) V (transient) T = 25C, t = 100 ns case transient DraintoSource Breakdown Voltage V / 12 (BR)DSS mV/C Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 DSS GS J V = 24 V A DS T = 125C 10 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V V = V , I = 250 A 1.3 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 5.1 mV/C GS(TH) J DraintoSource On Resistance R V = 10 V I = 30 A 2.3 2.8 DS(on) GS D m V = 4.5 V I = 30 A 3.3 4.0 GS D Forward Transconductance g V = 1.5 V, I = 15 A 68 S FS DS D Gate Resistance R T = 25C 0.3 1.0 2.0 G A CHARGES AND CAPACITANCES Input Capacitance C 1972 ISS Output Capacitance C 1215 V = 0 V, f = 1 MHz, V = 15 V pF OSS GS DS Reverse Transfer Capacitance C 59 RSS Capacitance Ratio C /C V = 0 V, V = 15 V, f = 1 MHz 0.030 RSS ISS GS DS Total Gate Charge Q 14 G(TOT) Threshold Gate Charge Q 3.3 G(TH) nC GatetoSource Charge Q 6.0 V = 4.5 V, V = 15 V I = 30 A GS GS DS D GatetoDrain Charge Q 5.0 GD Gate Plateau Voltage V 3.1 V GP Total Gate Charge Q V = 10 V, V = 15 V I = 30 A 30 nC G(TOT) GS DS D SWITCHING CHARACTERISTICS (Note 7) TurnOn Delay Time t 11 d(ON) Rise Time t 32 r V = 4.5 V, V = 15 V, GS DS ns I = 15 A, R = 3.0 D G TurnOff Delay Time t 21 d(OFF) Fall Time t 7.0 f www.onsemi.com 2