NTNS3193NZ MOSFET Single N-Channel, Small Signal, XLLGA3, 0.62 x 0.62 x 0.4 20 V, 224 mA NTNS3193NZ ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Units OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage V 20 V V = 0 V, I = 250 A (BR)DSS GS D Drain-to-Source Breakdown Voltage V /T I = 250 A, ref to 25C 19 mV/C (BR)DSS J D Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, T = 25C 1.0 A DSS GS J V = 20 V DS Gate-to-Source Leakage Current I V = 0 V, V = 8.0 V 2.0 A GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 0.4 1.0 V GS(TH) GS DS D Negative Gate Threshold V /T 1.9 mV/C GS(TH) J Temperature Coefficient Drain-to-Source On Resistance R V = 4.5 V, I = 100 mA 0.65 1.4 DS(on) GS D V = 2.5 V, I = 50 mA 0.9 1.9 GS D V = 1.8 V, I = 20 mA 1.1 2.2 GS D V = 1.5 V, I = 10 mA 1.4 4.3 GS D Forward Transconductance g V = 5 V, I = 100 mA 0.56 S FS DS D SourceDrain Diode Voltage V V = 0 V, I = 10 mA 0.55 1.0 V SD GS S CHARGES & CAPACITANCES pF Input Capacitance C 15.8 ISS V = 0 V, f = 1 MHz, GS Output Capacitance C 3.5 OSS V = 15 V DS Reverse Transfer Capacitance C 2.4 RSS nC Total Gate Charge Q 0.70 G(TOT) Threshold Gate Charge Q 0.05 G(TH) V = 4.5 V, V = 15 V, GS DS I = 200 mA D GatetoSource Charge Q 0.14 GS GatetoDrain Charge Q 0.10 GD SWITCHING CHARACTERISTICS, VGS = 4.5 V (Note 3) ns Turn-On Delay Time t 18 d(ON) Rise Time t 35 r V = 4.5 V, V = 15 V, GS DD I = 200 mA, R = 2 D G Turn-Off Delay Time t 201 d(OFF) Fall Time t 110 f 3. Switching characteristics are independent of operating junction temperatures.