NTSJ30U80CTG Very Low Forward Voltage Trench-based Schottky Rectifier Exceptionally Low V = 0.42 V at I = 5 A F F www.onsemi.com Features VERY LOW FORWARD VOLT- Fine Lithography Trenchbased Schottky Technology for Very Low AGE, LOW LEAKAGE SCHOT- Forward Voltage and Low Leakage TKY BARRIER Fast Switching with Exceptional Temperature Stability Low Power Loss and Lower Operating Temperature RECTIFIERS 30 AMPERES, Higher Efficiency for Achieving Regulatory Compliance 80 VOLTS Low Thermal Resistance High Surge Capability PIN CONNECTIONS This is a PbFree Package 1 2, 4 Typical Applications 3 Switching Power Supplies including Notebook / Netbook Adapters, ATX and Flat Panel Display High Frequency and DCDC Converters Freewheeling and ORing diodes Reverse Battery Protection Instrumentation TO220FP Mechanical Characteristics CASE 221AH Case: Epoxy, Molded Epoxy Meets Flammability Rating UL 940 0.125 in Finish: All External Surfaces Corrosion Resistant and Terminal Leads are Readily Solderable MARKING DIAGRAMS Lead Temperature for Soldering Purposes: 260C Maximum for 10 sec AYWW TS30U80CG AKA 1 A = Assembly Location Y = Year WW = Work Week AKA = Polarity Designator G = PbFree Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: July, 2016 Rev. 1 NTSJ30U80CT/DNTSJ30U80CTG MAXIMUM RATINGS Rating Symbol Value Unit Peak Repetitive Reverse Voltage V 80 V RRM Working Peak Reverse Voltage V RWM DC Blocking Voltage V R Average Rectified Forward Current I A F(AV) (Rated V , T = 125C) Per device 30 R C Per diode 15 Peak Repetitive Forward Current I A FRM (Rated V , Square Wave, 20 kHz, T = 120C) Per device 60 R C Per diode 30 Nonrepetitive Peak Surge Current I 160 A FSM (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature T 40 to +150 C J Storage Temperature T 40 to +150 C stg Voltage Rate of Change (Rated V ) dv/dt 10,000 V/ s R Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARACTERISTICS Rating Symbol Value Unit Maximum Thermal Resistance JunctiontoCase R 4.0 C/W JC (insertion mounted to 1 oz FR4 Board) JunctiontoAmbient 105 C/W R JA 1. JunctiontoCase, using large Heatsink attached to device. 2. JunctiontoAmbient, using with no Heatsink. ELECTRICAL CHARACTERISTICS (Per Leg unless otherwise noted) Rating Symbol Typ Max Unit Maximum Instantaneous Forward Voltage (Note 3) v V F (I = 5 A, T = 25C) 0.47 F J (I = 7.5 A, T = 25C) 0.52 F J (I = 15 A, T = 25C) 0.66 0.80 F J (I = 5 A, T = 125C) 0.42 F J (I = 7.5 A, T = 125C) 0.48 F J (I = 15 A, T = 125C) 0.60 0.65 F J Maximum Instantaneous Reverse Current (Note 3) I R (Rated dc Voltage, T = 25C) 15 200 A J (Rated dc Voltage, T = 125C) 10 35 mA J Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0% ORDERING INFORMATION Device Package Shipping NTSJ30U80CTG TO220FP 50 Units / Rail (PbFree) www.onsemi.com 2