NTTFS4985NF MOSFET Power, Single, N-Channel, WDFN8 30 V, 64 A Features www.onsemi.com Integrated Schottky Diode Low R to Minimize Conduction Losses DS(on) V R MAX I MAX (BR)DSS DS(on) D Low Capacitance to Minimize Driver Losses 3.5 m 10 V Optimized Gate Charge to Minimize Switching Losses 30 V 64 A 5.2 m 4.5 V These Devices are PbFree and are RoHS Compliant Applications NChannel MOSFET CPU Power Delivery D Synchronous Rectification for DCDC Converters Low Side Switching Telecom Secondary Side Rectification G MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit S DraintoSource Voltage V 30 V DSS GatetoSource Voltage V 20 V GS MARKING DIAGRAM Continuous Drain T = 25C I 22 A A D 1 Current R (Note 1) JA T = 85C 15.9 1 A S D 4985 WDFN8 S D Power Dissipation R T = 25C P 2.69 W JA A D AYWW (Note 1) ( 8FL) S D G D CASE 511AB Continuous Drain T = 25C I 32.4 A A D Current R 10 s JA T = 85C 23.4 (Note 1) A 4985 = Specific Device Code A = Assembly Location Power Dissipation T = 25C P 5.85 W A D R 10 s (Note 1) Steady Y = Year JA State WW = Work Week Continuous Drain T = 25C I 16.3 A D A = PbFree Package Current R (Note 2) JA T = 85C 11.7 A (Note: Microdot may be in either location) Power Dissipation T = 25C P 1.47 W A D R (Note 2) JA Continuous Drain I A T = 25C 64 D C ORDERING INFORMATION Current R (Note 1) JC T = 85C 46 C Device Package Shipping Power Dissipation T = 25C P 22.73 W C D NTTFS4985NFTAG WDFN8 1500 / Tape & R (Note 1) JC (PbFree) Reel Pulsed Drain Current T = 25C, t = 10 s I 192 A A p DM For information on tape and reel specifications, Operating Junction and Storage Temperature T , 55 to C J including part orientation and tape sizes, please T +150 stg refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Source Current (Body Diode) I 32 A S Drain to Source dV/dt dV/dt 6.0 V/ns Semiconductor Components Industries, LLC, 2015 1 Publication Order Number: June, 2019 Rev. 2 NTTFS4985NF/DNTTFS4985NF MAXIMUM RATINGS (T = 25C unless otherwise stated) J Parameter Symbol Value Unit Single Pulse DraintoSource Avalanche Energy E 52 mJ AS (T = 25C, V = 50 V, V = 10 V, J DD GS I = 32 A , L = 0.1 mH, R = 25 ) L pk G Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu. 2 2. Surfacemounted on FR4 board using the minimum recommended pad size of 90 mm . THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit JunctiontoCase (Drain) 5.5 C/W R JC JunctiontoAmbient Steady State (Note 3) R 46.4 JA JunctiontoAmbient Steady State (Note 4) R 84.8 JA JunctiontoAmbient (t 10 s) (Note 3) R 21.4 JA 3. Surfacemounted on FR4 board using 1 sqin pad, 2 oz Cu. 2 4. Surfacemounted on FR4 board using the minimum recommended pad size of 90 mm . ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 30 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 15 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I V = 0 V, 500 A DSS GS T = 25C J V = 24 V DS GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 1.2 1.6 2.3 V V = V , I = 250 A GS(TH) GS DS D Negative Threshold Temperature V /T 5.2 mV/C GS(TH) J Coefficient DraintoSource On Resistance R I = 20 A 2.8 3.5 m DS(on) D V = 10 V GS I = 10 A 2.8 D I = 20 A 4.16 5.2 D V = 4.5 V GS I = 10 A 4.13 D Forward Transconductance g V = 1.5 V, I = 10 A 34 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 2075 pF iss Output Capacitance C 876 V = 0 V, f = 1.0 MHz, V = 15 V oss GS DS Reverse Transfer Capacitance C 46 rss Total Gate Charge Q 13.6 nC G(TOT) Threshold Gate Charge Q 2.0 G(TH) V = 4.5 V, V = 15 V, I = 20 A GS DS D GatetoSource Charge Q 5.8 GS GatetoDrain Charge Q 4.1 GD Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width = 300 s, duty cycle 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2