NTD14N03R, NVD14N03R MOSFET Power, N-Channel, DPAK 14 A, 25 V Features www.onsemi.com Planar HD3e Process for Fast Switching Performance 14 AMPERES, 25 VOLTS Low R to Minimize Conduction Loss DS(on) Low C to Minimize Driver Loss R = 70.4 m (Typ) iss DS(on) Low Gate Charge D Optimized for High Side Switching Requirements in HighEfficiency DCDC Converters NVD and SVD Prefix for Automotive and Other Applications NCHANNEL G Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant S 4 MAXIMUM RATINGS (T = 25C unless otherwise specified) J 2 1 Parameter Symbol Value Unit 3 DraintoSource Voltage V 25 Vdc DPAK DSS CASE 369C GatetoSource Voltage Continuous V 20 Vdc GS (Surface Mount) STYLE 2 Thermal Resistance JunctiontoCase R 6.0 C/W JC Total Power Dissipation T = 25C P 20.8 W A D Drain Current Continuous T = 25C, Chip 14 A I A D MARKING DIAGRAM Continuous T = 25C, Limited by Package I 11.4 A A D & PIN ASSIGNMENTS Single Pulse (tp 10 s) I 28 A D Thermal Resistance, JunctiontoAmbient R 80 C/W JA 4 Drain (Note 1) Total Power Dissipation T = 25C 1.56 W P A D Drain Current Continuous T = 25C I 3.1 A A D Thermal Resistance, JunctiontoAmbient R 120 C/W JA (Note 2) Total Power Dissipation T = 25C P 1.04 W A D 1 3 Drain Current Continuous T = 25C 2.5 A 2 I A D Gate Source Drain Operating and Storage Temperature Range T , T 55 to C J stg 150 A = Assembly Location* Y = Year Maximum Lead Temperature for Soldering T 260 C L Purposes, 1/8 from case for 10 seconds WW = Work Week 14N03 = Device Code Stresses exceeding those listed in the Maximum Ratings table may damage the G = PbFree Package device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. * The Assembly Location code (A) is front side 1. When surface mounted to an FR4 board using 0.5 sq. in pad size. 2. When surface mounted to an FR4 board using minimum recommended pad optional. In cases where the Assembly Location is size. stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: May, 2019 Rev. 9 NTD14N03R/D AYWW T14 N03GNTD14N03R, NVD14N03R ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Characteristics Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V(br) Vdc DSS (V = 0 Vdc, I = 250 Adc) 25 28 GS D Temperature Coefficient (Positive) mV/C Zero Gate Voltage Drain Current I Adc DSS (V = 20 Vdc, V = 0 Vdc) 1.0 DS GS (V = 20 Vdc, V = 0 Vdc, T = 150C) 10 DS GS J GateBody Leakage Current I nAdc GSS (V = 20 Vdc, V = 0 Vdc) 100 GS DS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (Note 3) V Vdc GS(th) (V = V , I = 250 Adc) 1.0 1.5 2.0 DS GS D mV/C Threshold Temperature Coefficient (Negative) Static DraintoSource OnResistance (Note 3) R m DS(on) (V = 4.5 Vdc, I = 5 Adc) 117 130 GS D (V = 10 Vdc, I = 5 Adc) 70.4 95 GS D Forward Transconductance (Note 3) g Mhos FS (V = 10 Vdc, I = 5 Adc) 7.0 DS D DYNAMIC CHARACTERISTICS Input Capacitance C 115 pF iss Output Capacitance (V = 20 Vdc, V = 0 V, f = 1 MHz) C 62 oss DS GS Transfer Capacitance C 33 rss SWITCHING CHARACTERISTICS (Note 4) ns TurnOn Delay Time t 3.8 d(on) Rise Time t 27 r (V = 10 Vdc, V = 10 Vdc, GS DD I = 5 Adc, R = 3 ) D G TurnOff Delay Time t 9.6 d(off) Fall Time t 2.0 f Gate Charge Q 1.8 nC T (V = 5 Vdc, I = 5 Adc, GS D Q 0.8 1 V = 10 Vdc) (Note 3) DS Q 0.7 2 SOURCEDRAIN DIODE CHARACTERISTICS Forward OnVoltage V SD V dc (I = 5 Adc, V = 0 Vdc) (Note 3) S GS 0.93 1.2 (I = 5 Adc, V = 0 Vdc, T = 125C) S GS J 0.82 Reverse Recovery Time t 6.6 ns rr t 4.75 a (I = 5 Adc, V = 0 Vdc, S GS dI /dt = 100 A/ s) (Note 3) S t 1.88 b Reverse Recovery Stored Charge Q 0.002 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2