NTZD3152P MOSFET Dual, P-Channel with ESD Protection, Small Signal, SOT-563 -20 V, -430 mA www.onsemi.com Features V R Typ I Max (BR)DSS DS(on) D Low R Improving System Efficiency DS(on) 0.5 4.5 V Low Threshold Voltage 20 V 0.6 2.5 V 430 mA ESD Protected Gate 1.0 1.8 V Small Footprint 1.6 x 1.6 mm D D 1 2 These Devices are PbFree, Halogen Free/BFR Free and are RoHS Compliant Applications G G 1 2 Load/Power Switches Power Supply Converter Circuits PChannel Battery Management S MOSFET S 1 2 Cell Phones, Digital Cameras, PDAs, Pagers, etc. MARKING DIAGRAM 6 MAXIMUM RATINGS (T = 25C unless otherwise noted.) J 1 TU M Parameter Symbol Value Unit SOT5636 1 CASE 463A DraintoSource Voltage V 20 V DSS TU = Specific Device Code GatetoSource Voltage V 6.0 V GS M = Date Code Continuous Drain Current T = 25C 430 mA A = PbFree Package Steady I (Note 1) D (Note: Microdot may be in either location) State T = 85C 310 A Power Dissipation Steady State P 250 mW PINOUT: SOT563 D (Note 1) T = 25C 455 Continuous Drain Current mA A S 1 6 D 1 1 t 5 s I (Note 1) D T = 85C 328 A Power Dissipation t 5 s P 280 mW D (Note 1) 5 G G 2 2 1 Pulsed Drain Current t = 10 s I 750 mA p DM Operating Junction and Storage Temperature T , 55 to C J T 150 STG D 3 4 S 2 2 Source Current (Body Diode) I 350 mA S Top View Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) ORDERING INFORMATION THERMAL RESISTANCE RATINGS Device Package Shipping Parameter Symbol Max Unit NTZD3152PT1G SOT563 4000 / Tape & Reel (PbFree) JunctiontoAmbient Steady State (Note 1) 500 C/W NTZD3152PT1H R JA NTZD3152PT5H JunctiontoAmbient t 5 s (Note 1) 447 SOT563 8000 / Tape & Reel (PbFree) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be For information on tape and reel specifications, assumed, damage may occur and reliability may be affected. including part orientation and tape sizes, please 1. Surface mounted on FR4 board using 1 in. sq. pad size refer to our Tape and Reel Packaging Specifications (Cu. area = 1.127 in. sq. 1 oz. including traces). Brochure, BRD8011/D. Semiconductor Components Industries, LLC, 2016 1 Publication Order Number: June, 2019 Rev. 6 NTZD3152P/DNTZD3152P ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted.) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 20 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 18 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 1.0 A DSS J V = 0 V, GS V = 16 V DS T = 125C 2.0 J GatetoSource Leakage Current I V = 0 V, V = 4.5 V 2.0 A GSS DS GS ON CHARACTERISTICS (Note 2) Gate Threshold Voltage V V = V , I = 250 A 0.45 1.0 V GS(TH) GS DS D Negative Threshold V /T 1.9 mV/C GS(TH) J Temperature Coefficient DraintoSource On Resistance R V = 4.5 V, I = 430 mA 0.5 0.9 DS(on) GS D V = 2.5 V, I = 300 mA 0.6 1.2 GS D V = 1.8 V, I = 150 mA 1.0 2.0 GS D Forward Transconductance g V = 10 V, I = 430 mA 1.0 S FS DS D CHARGES AND CAPACITANCES Input Capacitance C 105 175 pF ISS V = 0 V, f = 1.0 MHz, GS Output Capacitance C 15 30 OSS V = 16 V DS Reverse Transfer Capacitance C 10 20 RSS Total Gate Charge Q 1.7 2.5 nC G(TOT) Threshold Gate Charge Q 0.1 G(TH) V = 4.5 V, V = 10 V, GS DS I = 215 mA D GatetoSource Charge Q 0.3 GS GatetoDrain Charge Q 0.4 GD SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t 10 ns d(on) Rise Time t 12 r V = 4.5 V, V = 10 V, GS DD I = 215 mA, R = 10 D G TurnOff Delay Time t 35 d(off) Fall Time t 19 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 350 mA S Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 13 ns RR GS SD I = 350 mA S Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width 300 s, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2