NTD2955, NVD2955 MOSFET Power, P-Channel, DPAK -60 V, -12 A This Power MOSFET is designed to withstand high energy in the www.onsemi.com avalanche and commutation modes. Designed for lowvoltage, high speed switching applications in power supplies, converters, and power V R TYP I MAX (BR)DSS DS(on) D motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are 60 V 155 m 10 V, 6 A 12 A critical and offer an additional safety margin against unexpected D voltage transients. Features Avalanche Energy Specified PChannel G I and V Specified at Elevated Temperature DSS DS(on) Designed for LowVoltage, HighSpeed Switching Applications and S to Withstand High Energy in the Avalanche and Commutation Modes NVD and SVD Prefix for Automotive and Other Applications 4 Requiring Unique Site and Control Change Requirements AECQ101 Qualified and PPAP Capable 4 These Devices are PbFree and are RoHS Compliant 1 2 1 2 MAXIMUM RATINGS (T = 25C unless otherwise noted) J 3 3 DPAK IPAK Rating Symbol Value Unit CASE 369C CASE 369D DraintoSource Voltage V 60 Vdc DSS STYLE 2 STYLE 2 GatetoSource Voltage V 20 Vdc Continuous GS MARKING DIAGRAMS V 25 Vpk GSM Nonrepetitive (t 10 ms) p & PIN ASSIGNMENTS Drain Current 4 4 I 12 Adc Dr Continuous T = 25C D Drain Drain a I 18 Apk DM Dr Single Pulse (t 10 ms) p Total Power Dissipation T = 25C P 55 W a D Operating and Storage Temperature T , T 55 to C J stg 175 Range Single Pulse DraintoSource Avalanche E 216 mJ AS 2 1 3 Energy Starting T = 25C J Drain Gate Source (V = 25 Vdc, V = 10 Vdc, Peak DD GS 1 2 3 I = 12 Apk, L = 3.0 mH, R = 25 ) L G Gate Drain Source Thermal Resistance A = Assembly Location* R 2.73 C/W JunctiontoCase JC NT2955/NV2955 = Specific Device Code (DPAK) R 71.4 JunctiontoAmbient (Note 1) JA R 100 NT2955 = Specific Device Code (IPAK) JA JunctiontoAmbient (Note 2) Y = Year Maximum Lead Temperature for Soldering T 260 C L WW = Work Week Purposes, 1/8 in. from case for G = PbFree Package 10 seconds * The Assembly Location code (A) is front side Stresses exceeding those listed in the Maximum Ratings table may damage the optional. In cases where the Assembly Location is device. If any of these limits are exceeded, device functionality should not be stamped in the package, the front side assembly assumed, damage may occur and reliability may be affected. code may be blank. 1. When surface mounted to an FR4 board using 1 in pad size 2 (Cu area = 1.127 in ). 2. When surface mounted to an FR4 board using the minimum recommended ORDERING INFORMATION 2 pad size (Cu area = 0.412 in ). See detailed ordering and shipping information on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: May, 2019 Rev. 16 NTD2955/D AYWW NT 2955G AYWW NT 2955GNTD2955, NVD2955 ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage (Note 3) V Vdc (BR)DSS 60 (V = 0 Vdc, I = 0.25 mA) GS D 67 mV/C (Positive Temperature Coefficient) Zero Gate Voltage Drain Current I Adc DSS 10 (V = 0 Vdc, V = 60 Vdc, T = 25C) GS DS J 100 (V = 0 Vdc, V = 60 Vdc, T = 150C) GS DS J GateBody Leakage Current (V = 20 Vdc, V = 0 Vdc) I 100 nAdc GS DS GSS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V Vdc GS(th) 2.0 2.8 4.0 (V = V , I = 250 Adc) DS GS D 4.5 mV/C (Negative Temperature Coefficient) Static DrainSource OnState Resistance R DS(on) 0.155 0.180 (V = 10 Vdc, I = 6.0 Adc) GS D DraintoSource OnVoltage V Vdc DS(on) 1.86 2.6 (V = 10 Vdc, I = 12 Adc) GS D 2.0 (V = 10 Vdc, I = 6.0 Adc, T = 150C) GS D J Forward Transconductance (V = 10 Vdc, I = 6.0 Adc) 8.0 Mhos DS D gFS DYNAMIC CHARACTERISTICS Input Capacitance C 500 750 pF iss (V = 25 Vdc, V = 0 Vdc, DS GS Output Capacitance C 150 250 oss F = 1.0 MHz) Reverse Transfer Capacitance C 50 100 rss SWITCHING CHARACTERISTICS (Notes 3 and 4) TurnOn Delay Time t 10 20 ns d(on) Rise Time t 45 85 r (V = 30 Vdc, I = 12 A, DD D V = 10 V, R = 9.1 ) GS G TurnOff Delay Time t 26 40 d(off) Fall Time t 48 90 f Gate Charge Q 15 30 nC T (V = 48 Vdc, V = 10 Vdc, DS GS Q 4.0 GS I = 12 A) D Q 7.0 GD DRAINSOURCE DIODE CHARACTERISTICS (Note 3) Diode Forward OnVoltage V Vdc SD 1.6 2.5 (I = 12 Adc, V = 0 V) S GS 1.3 (I = 12 Adc, V = 0 V, T = 150C) S GS J Reverse Recovery Time t 50 ns rr (I = 12 A, dI /dt = 100 A/ s ,V = 0 V) S S GS t 40 a t 10 b Reverse Recovery Stored Charge Q 0.10 C RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Indicates Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 4. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2