Product Information

NTZS3151PT1G

NTZS3151PT1G electronic component of ON Semiconductor

Datasheet
MOSFET -20V -950mA P-Channel
Manufacturer: ON Semiconductor
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1: USD 0.368 ea
Line Total: USD 0.37

5300 - Global Stock
Ships to you between
Tue. 28 May to Thu. 30 May
MOQ: 1  Multiples: 1
Pack Size: 1

 More Buying Options & Price Grid(s)

Availability Price Quantity
5781 - WHS 1


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 1
Multiples : 1

Stock Image

NTZS3151PT1G
ON Semiconductor

1 : USD 0.15
10 : USD 0.1395
25 : USD 0.129
100 : USD 0.1184
250 : USD 0.1078
500 : USD 0.1056
1000 : USD 0.1056
3000 : USD 0.1056

10471 - WHS 2


Ships to you between
Wed. 29 May to Mon. 03 Jun

MOQ : 5
Multiples : 5

Stock Image

NTZS3151PT1G
ON Semiconductor

5 : USD 0.2541
50 : USD 0.199
150 : USD 0.1754
500 : USD 0.1459
2500 : USD 0.1329
4000 : USD 0.125

5300 - WHS 3


Ships to you between Tue. 28 May to Thu. 30 May

MOQ : 1
Multiples : 1

Stock Image

NTZS3151PT1G
ON Semiconductor

1 : USD 0.368
10 : USD 0.2841
100 : USD 0.1622
1000 : USD 0.1104
4000 : USD 0.1081
8000 : USD 0.1035
24000 : USD 0.1024

5781 - WHS 4


Ships to you between Wed. 22 May to Tue. 28 May

MOQ : 71
Multiples : 1

Stock Image

NTZS3151PT1G
ON Semiconductor

71 : USD 0.129
100 : USD 0.1184
250 : USD 0.1078
500 : USD 0.1056

Read More Specifications

     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
Packaging
Configuration
Series
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Category
Brand Category
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Additional Infomation About Product

The NTZS3151PT1G is a P-Channel MOSFET manufactured by ON Semiconductor. It has a drain–source breakdown voltage of -20V and a maximum drain current of -950mA. The MOSFET is designed with the latest ON Semiconductor design enhancements and features Ultra Low On-Resistance (RDS(on)) and fast switching performance. It is ideal for low voltage applications with its low gate drive requirements. The device is a silicon transistor with the gate, source and drain terminals.

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

ON Semiconductor may also be referenced as

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FAIRCHILD
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Fairchild Semiconductor
FS8
FSC
ON
ON SEMI
ON Semicon
ON SEMICONDUCTOR
ON SEMICONDUCTOR (FAIRCHILD)
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ON4
ON5
onsemi
ON-SEMI
onsemi / Fairchild
OOF
Xsens / Fairchild

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