NVD5C486NL MOSFET Power, Single N-Channel 40 V, 16 m , 24 A Features www.onsemi.com Low R to Minimize Conduction Losses DS(on) Low Q and Capacitance to Minimize Driver Losses G AECQ101 Qualified and PPAP Capable V R I (BR)DSS DS(on) D These Devices are PbFree, Halogen Free/BFR Free and are RoHS 16 m 10 V Compliant 40 V 24 A 24.5 m 4.5 V MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit D DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Cur- T = 25C I 24 A D C G rent R (Notes 1 & 3) JC T = 100C 17 C Steady State Power Dissipation R T = 25C P 18 W JC C D S (Note 1) NCHANNEL MOSFET T = 100C 9.0 C Continuous Drain T = 25C I 9.8 A A D 4 Current R JA T = 100C 7.0 (Notes 1, 2 & 3) A Steady State 2 1 Power Dissipation R T = 25C P 2.9 W JA A D 3 (Notes 1 & 2) T = 100C 1.4 A DPAK Pulsed Drain Current T = 25C, t = 10 s I 110 A DM A p CASE 369C Operating Junction and Storage Temperature T , T 55 to C STYLE 2 J stg 175 MARKING DIAGRAM Source Current (Body Diode) I 15 A S & PIN ASSIGNMENT Single Pulse DraintoSource Avalanche E 63 mJ AS Energy (T = 25C, I = 1.7 A) 4 J L(pk) Drain Lead Temperature for Soldering Purposes T 260 C L (1/8 from case for 10 s) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 Drain 1 3 THERMAL RESISTANCE MAXIMUM RATINGS Gate Source Parameter Symbol Value Unit A = Assembly Location C/W JunctiontoCase (Drain) (Note 1) R 8.2 JC Y = Year WW = Work Week JunctiontoAmbient Steady State (Note 2) R 52 JA 5C486NL = Device Code 1. The entire application environment impacts the thermal resistance values shown, G = PbFree Package they are not constants and are only valid for the particular conditions noted. 2 2. Surfacemounted on FR4 board using a 650 mm , 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent ORDERING INFORMATION on pulse duration and duty cycle. See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Semiconductor Components Industries, LLC, 2017 1 Publication Order Number: June, 2019 Rev. 0 NVD5C486NL/D AYWW 5C 486NLGNVD5C486NL ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise noted) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V /T 17 mV/C (BR)DSS J Temperature Coefficient Zero Gate Voltage Drain Current I T = 25C 10 A DSS J V = 0 V, GS V = 40 V DS T = 125C 250 J GatetoSource Leakage Current I V = 0 V, V = 20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 4) Gate Threshold Voltage V V = V , I = 20 A 1.2 2.2 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T 4.6 mV/C GS(TH) J DraintoSource On Resistance R V = 4.5 V, I = 10 A 19.6 24.5 m DS(on) GS D DraintoSource On Resistance R V = 10 V, I = 10 A 13.3 16 m DS(on) GS D Forward Transconductance g V = 3 V, I = 10 A 25.5 S FS DS D CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance C 530 pF iss V = 0 V, f = 1.0 MHz, GS Output Capacitance C 210 oss V = 25 V DS Reverse Transfer Capacitance C 13 rss Total Gate Charge Q V = 4.5 V, V = 32 V, 4.7 nC G(TOT) GS DS I = 10 A D Total Gate Charge Q 9.8 nC G(TOT) Threshold Gate Charge Q 1.2 G(TH) V = 10 V, V = 32 V, GS DS GatetoSource Charge Q 2.0 GS I = 10 A D GatetoDrain Charge Q 1.5 GD Plateau Voltage V 3.2 V GP SWITCHING CHARACTERISTICS (Note 5) TurnOn Delay Time t 6.0 ns d(on) Rise Time t 14 r V = 10 V, V = 32 V, GS DS I = 10 A, R = 2.5 D G TurnOff Delay Time t 15 d(off) Fall Time t 2.0 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V T = 25C 0.88 1.2 V SD J V = 0 V, GS I = 10 A S T = 125C 0.77 J ns Reverse Recovery Time t 19 RR Charge Time ta 8.0 V = 0 V, dIs/dt = 100 A/ s, GS I = 10 A S Discharge Time tb 10 Reverse Recovery Charge Q 10 nC RR 4. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2