MOSFET Power, N-Channel, SUPERFET III, FRFET 650 V, 40 A, 82 m NVHL082N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductors brand new high voltage superjunction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate V R MAX I MAX DSS DS(ON) D charge performance. This advanced technology is tailored to minimize 650 V 82 m 10 V 40 A conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. D Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFETs optimized reverse recovery performance of body diode can remove additional component and improve system reliability. G Features 700 V T = 150C J S Typ. R = 64 m DS(on) POWER MOSFET Ultra Low Gate Charge (Typ. Q = 81 nC) g Low Effective Output Capacitance (Typ. C = 722 pF) oss(eff.) 100% Avalanche Tested AECQ101 Qualified and PPAP Capable Applications G Automotive On Board Charger HEVEV D S Automotive DC/DC converter for HEVEV TO247 LONG LEADS CASE 340CX MARKING DIAGRAM Y&Z&3&K NVHL 082N65S3F Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Data Code (Year & Week) &K = Lot NVHL082N65S3F = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: September, 2020 Rev. 2 NVHL082N65S3F/DNVHL082N65S3F ABSOLUTE MAXIMUM RATINGS (T = 25C, Unless otherwise noted) C Symbol Parameter Value Unit V Drain to Source Voltage 650 V DSS V Gate to Source Voltage DC 30 V GSS AC (f > 1 Hz) 30 I Drain Current Continuous (T = 25C) 40 A D C Continuous (T = 100C) 25.5 C I Drain Current Pulsed (Note 1) 100 A DM E Single Pulsed Avalanche Energy (Note 2) 510 mJ AS E Repetitive Avalanche Energy (Note 1) 3.13 mJ AR dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 P Power Dissipation (T = 25C) 313 W D C Derate Above 25C 2.5 W/C T , T Operating and Storage Temperature Range 55 to +150 C J STG T Maximum Lead Temperature for Soldering, 1/8 from Case for 5 seconds 300 C L Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulsewidth limited by maximum junction temperature. 2. I = 4.8 A, R = 25 , starting T = 25C. AS G J 3. I 20 A, di/dt 200 A/ s, V 400 V, starting T = 25C. SD DD J THERMAL CHARACTERISTICS Symbol Parameter Value Unit R Thermal Resistance, Junction to Case, Max. 0.4 C/W JC R Thermal Resistance, Junction to Ambient, Max. 40 JA PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL082N65S3F NVHL082N65S3F TO247 Tube N/A N/A 30 Units www.onsemi.com 2