MOSFET - Power, DUAL COOL N-Channel, DFN8 5x6 40 V, 0.87 m , 310 A NVMFSC0D9N04C www.onsemi.com Features Advanced Dualsided Cooled Packaging Small Footprint (5x6 mm) for Compact Design V R MAX I MAX (BR)DSS DS(ON) D Ulra Low R to Minimize Conduction Losses DS(on) 40 V 0.87 m 10 V 310 A Low Q and Capacitance to Minimize Driver Losses G AECQ101 Qualified and PPAP Capable These Devices are PbFree and are RoHS Compliant NChannel MOSFET MSL1 Robust Packaging Design MAXIMUM RATINGS (T = 25C unless otherwise noted) J Parameter Symbol Value Unit DraintoSource Voltage V 40 V DSS GatetoSource Voltage V 20 V GS Continuous Drain Steady T = 25C I 313 A C D Current R (Note 2) State JC Power Dissipation P 166 W D R (Note 2) JC Continuous Drain Steady T = 25C I 48.9 A A D Current R State JA (Notes 1, 2) Power Dissipation P 4.1 W D R (Notes 1, 2) JA Pulsed Drain Current I 900 A T = 25C, t = 10 s A p DM Operating Junction and Storage Temperature T , T 55 to C J stg DFN8 (SO8FL) Range +175 CASES 506EG Source Current (Body Diode) I 158 A S Single Pulse DraintoSource Avalanche E 578 mJ AS MARKING DIAGRAM Energy (I = 34 A) L(pk) Lead Temperature Soldering Reflow for Solder- T 300 C L AYWWZZ ing Purposes (1/8 from case for 10 s) 410NDC Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS 410NDC= Specific Device Code Parameter Symbol Value Unit A = Assembly Location Y = Year JunctiontoCase (Bottom) Steady State R 0.9 C/W JC W = Work Week (Note 2) ZZ = Lot Traceability JunctiontoCase (Top) Steady State (Note 2) R 1.4 JC JunctiontoAmbient Steady State (Note 2) R 37 JA 2 1. Surfacemounted on FR4 board using a 1 in pad size, 1 oz Cu pad. ORDERING INFORMATION 2. The entire application environment impacts the thermal resistance values shown, See detailed ordering, marking and shipping information on they are not constants and are only valid for the particular conditions noted. page 5 of this data sheet. Semiconductor Components Industries, LLC, 2018 1 Publication Order Number: March, 2021 Rev. 4 NVMFSC0D9N04C/DNVMFSC0D9N04C ELECTRICAL CHARACTERISTICS (T = 25C unless otherwise specified) J Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS DraintoSource Breakdown Voltage V V = 0 V, I = 250 A 40 V (BR)DSS GS D DraintoSource Breakdown Voltage V / I = 250 A, ref to 25C 5 mV/C (BR)DSS D Temperature Coefficient T J Zero Gate Voltage Drain Current I V = 0 V, T = 25C 10 A DSS GS J V = 40 V DS T = 125C 100 J GatetoSource Leakage Current I V = 0 V, V = +20 V 100 nA GSS DS GS ON CHARACTERISTICS (Note 3) Gate Threshold Voltage V V = V , I = 250 A 2.5 3.5 V GS(TH) GS DS D Negative Threshold Temperature Coefficient V /T I = 250 A, ref to 25C 8.6 mV/C GS(TH) J D DraintoSource On Resistance R V = 10 V I = 50 A 0.69 0.87 m DS(on) GS D CHARGES & CAPACITANCES Input Capacitance C V = 0 V, f = 1 MHz, V = 25 V 6100 pF ISS GS DS Output Capacitance C 3400 OSS Reverse Transfer Capacitance C 70 RSS Total Gate Charge Q V = 10 V, V = 32 V I = 50 A 86 nC G(TOT) GS DS D GatetoSource Charge Q 28 GS GatetoDrain Charge Q 14 GD Plateau Voltage V 4.9 V GP SWITCHING CHARACTERISTICS (Note 3) TurnOn Delay Time t V = 10 V, V = 32 V, 54 ns d(ON) GS DS I = 50 A, R = 2.5 D G Rise Time t 160 r TurnOff Delay Time t 220 d(OFF) Fall Time t 170 f DRAINSOURCE DIODE CHARACTERISTICS Forward Diode Voltage V V = 0 V, T = 25C 0.8 1.2 V SD GS J I = 50 A S T = 125C 0.65 J Reverse Recovery Time t V = 0 V, dI /dt = 100 A/ s, 91 ns RR GS S I = 50 A S Charge Time t 42 a Discharge Time t 49 b Reverse Recovery Charge Q 159 nC RR Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2