This product complies with the RoHS Directive (EU 2002/95/EC). Transistors 2SB0774 (2SB774) Silicon PNP epitaxial planar type For low-frequency amplification Unit: mm 5.00.2 4.00.2 Features High emitter-base voltage (Collector open) V EBO Protective diodes and resistances between emitter and base can be omitted. 0.70.1 Absolute Maximum Ratings T = 25C a Parameter Symbol Rating Unit +0.15 +0.15 0.45 0.45 0.1 0.1 Collector-base voltage (Emitter open) V 30 V CBO +0.6 +0.6 2.5 2.5 0.2 0.2 Collector-emitter voltage (Base open) V 25 V CEO 1: Emitter 123 Emitter-base voltage (Collector open) V 15 V EBO 2: Collector Collector current I 100 mA C 3: Base EIAJ: SC-43A Peak collector current I 200 mA CP TO-92-B1 Package Collector power dissipation P 400 mW C Junction temperature T 150 C j Storage temperature T 55 to +150 C stg Electrical Characteristics T = 25C 3C a Parameter Symbol Conditions Min Typ Max Unit Collector-base voltage (Emitter open) V I = 10 A, I = 0 30 V CBO C E Collector-emitter voltage (Base open) V I = 2 mA, I = 0 25 V CEO C B Emitter-base voltage (Collector open) V I = 10 A, I = 0 15 V EBO E C Collector-base cutoff current (Emitter open) I V = 10 V, I = 0 1 A CBO CB E Collector-emitter cutoff current (Base open) I V = 20 V, I = 0 100 A CEO CE B * Forward current transfer ratio h V = 10 V, I = 2 mA 210 460 FE1 CE C h V = 2 V, I = 100 mA 90 FE2 CE C Collector-emitter saturation voltage V I = 100 mA, I = 10 mA 0.5 V CE(sat) C B Transition frequency f V = 10 V, I = 2 mA, f = 200 MHz 150 MHz T CB E Collector output capacitance C V = 10 V, I = 0, f = 1 MHz 4 pF ob CB E (Common-emitter reverse transfer) Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. : Rank classification * Rank R S h 210 to 340 290 to 460 FE1 Note) The part number in the parenthesis shows conventional part number. Publication date: March 2003 SJC00053BED 1 Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information. This product complies with the RoHS Directive (EU 2002/95/EC). 2SB0774 P T I V I V C a C CE C BE 500 200 240 T = 25C a V = 10 V I = 1.8 mA CE B 1.6 mA 200 1.4 mA 400 160 1.2 mA 160 1.0 mA 300 120 0.8 mA 25C 0.6 mA 120 T = 75C 25C a 200 80 0.4 mA 80 0.2 mA 100 40 40 0 0 0 0 0.4 0.8 1.2 1.6 2.0 0 40 80 120 160 0 2 4 6 8 10 12 Ambient temperature T (C) Base-emitter voltage V (V) Collector-emitter voltage V (V) a BE CE V I h I f I CE(sat) C FE C T E 600 100 1000 I / I = 10 C B V = 10 V V = 10 V CE CB T = 25C a 500 10 400 T = 75C a 25C 300 1 100 25C 200 T = 75C a 0.1 25C 100 25C 0 10 0.01 0.1 1 10 100 0.1 1 10 100 0.1 1 10 100 Collector current I (mA) Emitter current I (mA) Collector current I (mA) C E C C V ob CB 12 I = 0 E f = 1 MHz T = 25C a 10 8 6 4 2 0 1 10 100 Collector-base voltage V (V) CB 2 SJC00053BED Maintenance/ Discontinued Maintenance/Discontinued includes following four Product lifecycle stage. planed maintenance type maintenance type planed discontinued typed discontinued type Please visit following URL about latest information.