2N7002KDW 60V N-Channel Enhancement Mode MOSFET - ESD Protected FEATURES R , V 10V,I 500mA=3 DS(ON) GS DS R , V 4.5V,I 200mA=4 DS(ON) GS DS Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive Green molding compound as per IEC61249 Std (Halogen Free) MECHANICAL DATA Case: SOT-363 Package Terminals: Solderable per MIL-STD-750,Method 2026 Approx. Weight: 0.0002 ounces, 0.006 grams Marking: K27 666 555 444 111 222 333 O Maximum RATINGS and Thermal Characteristics (T =25 C unless otherwise noted ) A Parameter Symbol Limit Units Drain-Source Voltage V 60 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 115 mA D 1) Pulsed Drain Current I 800 mA DM O T =25 C 200 A Maximum Power Dissipation P mW O D T =75 C 120 A Operating Junction and Storage O T ,T -55 to +150 C J STG Temperature Range Junction-to Ambient Thermal Resistance O R 625 C/W 2 JA (PCB mounted) Note:1.Maximum DC current limited by the package 2.Surface mounted on FR4 board, t<10 sec 3.Pulse width<300us, Duty cycle<2% PAGE . 1 May 25,2016REV.042N7002KDW ELECTRICAL CHARACTERISTICS Parameter Symbol Test Condition Min. Typ. Max. Units Static Drain-Source Breakdown BV V =0V, I =10uA 60 - - V DSS GS D Voltage Gate Threshold Voltage V V =V , I =250uA 1 - 2.5 V GS(th) DS GS D Drain-Source On-State R V =4.5V, I =200mA - - 4.0 DS(on) GS D Resistance Drain-Source On-State R V =10V, I =500mA - - 3.0 DS(on) GS D Resistance Zero Gate Voltage Drain I V =60V, V=0V --1 uA DSS DS GS Current Gate Body Leakage I V =+20V, V =0V - - +10 uA GSS GS DS Forward Transconductance g V =15V, I =250mA 100 - - mS fS DS D Dynamic V =15V, I =200mA DS D Total Gate Charge Q -- 0.8 nC g V =4.5V GS Turn-On Delay Time t V =30V , R =150 -- 20 on DD L I =200mA , V =10V ns D GEN R =10 Turn-Off Delay Time t -- 40 G off Input Capacitance C -- 35 iss V =25V, V =0V DS GS Output Capacitance C -- 10 pF oss f=1.0MH Z Reverse Transfer C -- 5 rss Capacitance Source-Drain Diode Diode Forward Voltage V I =200mA , V =0V - 0.82 1.3 V SD S GS Continuous D iode Forward I -- -115mA s Current Pulsed Diode Forward I -- -800mA sM Current VDD VDD Switching Gate Charge Test Circuit Test Circuit RL RL VIN VGS VOUT 1mA RG RG PAGE . 2 May 25,2016REV.04