P2N7002KW-AU 60V N-Channel Enhancement Mode MOSFET ESD Protected SOT-323 Unit: inch(mm) 60 V 250mA Voltage Current Features R , V 10V, I 500mA<3 DS(ON) GS D R , V 4.5V, I 200mA<4 DS(ON) GS D Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Very Low Leakage Current In Off Condition Specially Designed for Battery Operated Systems, Solid- State Relays Drivers: Relay, Displays, Memories, etc ESD Protected 2KV HBM AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case : SOT-323 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0002 ounces, 0.005 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 60 DS V Gate-Source Voltage V +20 GS Continuous Drain Current I 250 D mA Pulsed Drain Current I 1000 DM o T =25 C 350 mW a Power Dissipation P D o o Derate above 25 C 2.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal Resistance (Note 3) o R 357 JA - Junction to Ambient C/W October 27,2017-REV.01 Page 1 P2N7002KW-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =10uA 60 - - DSS GS D V Gate Threshold Voltage V V =V , I =250uA 1 - 2.5 GS(th) DS GS D V =10V,I =500mA - - 3 GS D Drain-Source On-State Resistance R DS(on) V =4.5V,I =200mA - - 4 GS D Zero Gate Voltage Drain Current I V =60V,V =0V - - 1 DSS DS GS uA Gate-Source Leakage Current I V =+20V,V =0V - - +10 GSS GS DS Forward Transconductance g V =15V, I =250mA 100 - - mS fs DS D (Note 5) Dynamic Total Gate Charge Q - 0.8 - g V =15V, I =250mA, DS D Gate-Source Charge Q - 0.35 - nC gs (Note 1,2) V =5V GS Gate-Drain Charge Q - 0.2 - gd Input Capacitance Ciss - 24 - V =25V, V =0V, DS GS Output Capacitance Coss - 13 - pF f=1MHZ Reverse Transfer Capacitance Crss - 8 - Turn-On Delay Time td - 3 - (on) V =30V, I =200mA, DD D Turn-On Rise Time tr - 19 - V =10V, ns GS Turn-Off Delay Time td - 15 - (off) (Note 1,2) R =10 G Turn-Off Fall Time tf - 23 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 250 mA S Diode Forward Current Diode Forward Voltage V I =200mA, V =0V - 0.82 1.3 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. October 27,2017-REV.01 Page 2