X-On Electronics has gained recognition as a prominent supplier of PJA3407_R1_00001 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJA3407_R1_00001 MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJA3407_R1_00001 Panjit

PJA3407_R1_00001 electronic component of Panjit
PJA3407_R1_00001 Panjit
PJA3407_R1_00001 MOSFETs
PJA3407_R1_00001  Semiconductors

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See Product Specifications
Part No. PJA3407_R1_00001
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET P Trench 30V 3.8A 2.1V @ 250uA 65 mΩ @ 3.8A,10V SOT-23 RoHS
Datasheet: PJA3407_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.475 ea
Line Total: USD 0.48 
Availability - 15464
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
15464
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.475
10 : USD 0.2912
100 : USD 0.1776
500 : USD 0.1232
1000 : USD 0.11
3000 : USD 0.0913
6000 : USD 0.0869
9000 : USD 0.0781
24000 : USD 0.0748

2856
Ship by Tue. 17 Jun to Thu. 19 Jun
MOQ : 1
Multiples : 1
1 : USD 0.392
10 : USD 0.2674
100 : USD 0.196
188 : USD 0.0994
518 : USD 0.0938

   
Manufacturer
Product Category
Rohs
Package
Brand Category
Fet Type
Drain To Source Voltagevdss
Continuous Drain Current Id @ 25°C
Vgsth Max @ Id
Rds On Max @ Id Vgs
Power Dissipation-Max Ta
LoadingGif
 
Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PJA3407_R1_00001 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJA3407_R1_00001 and other electronic components in the MOSFETs category and beyond.

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PPJA3407 30V P-Channel Enhancement Mode MOSFET SOT-23 Unit: inch(mm) Voltage -30 V Current -3.8A Features RDS(ON) , VGS -10V, ID -3.8A<65m RDS(ON) , VGS -4.5V, ID -2.6A<80m Advanced Trench Process Technology Specially Designed for Switch Load, PWM Applications, and Solid-State Relays Drivers: Relay Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A07 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -30 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I -3.8 A D Pulsed Drain Current I -15.2 A DM o T =25 C 1.25 W a Power Dissipation P D o o Derate above 25 C 10 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 100 JA - Junction to Ambient C/W March 10,2014-REV.00 Page 1 PPJA3407 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =-250uA -30 - - V DSS GS D Gate Threshold Voltage V V =V , I =-250uA -1.0 -1.36 -2.1 V GS(th) DS GS D V =-10V, I =-3.8A - 52 65 GS D Drain-Source On-State Resistance R m DS(on) V =-4.5V, I =-2.6A - 66 80 GS D Zero Gate Voltage Drain Current I V =-30V, V =0V - -0.01 -1 uA DSS DS GS Gate-Source Leakage Current I V =+20V, V =0V - +10 +100 nA GSS GS DS Dynamic Total Gate Charge Q - 12 - g V =-15V, I =-3.8A, DS D Gate-Source Charge Q - 1.7 - nC gs (Note 1,2) V =-10V GS Gate-Drain Charge Q - 2.3 - gd Input Capacitance Ciss - 528 - V =-15V, V =0V, DS GS Output Capacitance Coss - 63 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 48 - Switching Turn-On Delay Time td - 5 - (on) V =-15V, I =-3.8A, DD D Turn-On Rise Time tr 33 V =-10V, ns GS Turn-Off Delay Time td - 27 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf 10 Drain-Source Diode Maximum Continuous Drain-Source I --- - - -1.5 A S Diode Forward Current Diode Forward Voltage V I =-1.0A, V =0V - 0.76 -1.2 V SD S GS NOTES: 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper 4. The maximum current rating is package limited March 10,2014-REV.00 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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