PPJA3435 20V P-Channel Enhancement Mode MOSFET ESD Protected SOT-23 Unit: inch(mm) Voltage -20 V Current -0.5A Features Low Voltage Drive (1.2V). Advanced Trench Process Technology Specially Designed for Load switch, PWM Application, etc. ESD Protected Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams Marking: A35 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -20 V DS Gate-Source Voltage V +10 V GS Continuous Drain Current I -0.5 A D (Note 4) Pulsed Drain Current I -1.0 A DM o T =25 C 500 mW a Power Dissipation P D o o Derate above 25 C 4 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 250 JA - Junction to Ambient C/W December 24,2014-REV.00 Page 1 PPJA3435 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =-250uA -20 - - V DSS GS D Gate Threshold Voltage V V =V , I =-250uA -0.3 -0.59 -1.0 V GS(th) DS GS D V =-4.5V, I =-0.5A - 0.85 1.2 GS D V =-2.5V, I =-0.2A - 0.98 1.5 GS D Drain-Source On-State Resistance R DS(on) V =-1.8V, I =-0.1A - 1.15 2.2 GS D V =-1.5V, I =-0.05A - 1.33 3.6 GS D V =-1.2V, I =-0.01A - 1.5 6.0 GS D Zero Gate Voltage Drain Current I V =-16V, V =0V - -0.01 -1 uA DSS DS GS Gate-Source Leakage Current I V =+8V, V =0V - +2 +10 uA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 1.4 - g V =-10V, I =-0.5A, DS D Gate-Source Charge Q - 0.19 - nC gs (Note 1,2) V =-4.5V GS Gate-Drain Charge Q - 0.2 - gd Input Capacitance Ciss - 38 - V =-10V, V =0V, DS GS Output Capacitance Coss - 15 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 9 - Turn-On Delay Time td - 7.2 - (on) V =-10V, I =-0.5A, DD D Turn-On Rise Time tr - 21 - V =-4.5V, ns GS Turn-Off Delay Time td - 85 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 116 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -0.5 A S Diode Forward Current Diode Forward Voltage V I =-0.5A, V =0V - -0.93 -1.3 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. December 24,2014-REV.00 Page 2