X-On Electronics has gained recognition as a prominent supplier of PJA3439-AU_R1_000A1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJA3439-AU_R1_000A1 MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJA3439-AU_R1_000A1 Panjit

PJA3439-AU_R1_000A1 electronic component of Panjit
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Part No.PJA3439-AU_R1_000A1
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET /A39/TR/7"/HF/3K/SOT-23/MOS/SOT/NFET-60TMP/NF60T-QI03/PJ///
Datasheet: PJA3439-AU_R1_000A1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.2426 ea
Line Total: USD 0.24 
Availability - 6632
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6632
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.2426
10 : USD 0.1656
100 : USD 0.0874
1000 : USD 0.0805
3000 : USD 0.0644
9000 : USD 0.0575
24000 : USD 0.0575
45000 : USD 0.0541

1789
Ship by Thu. 07 Nov to Wed. 13 Nov
MOQ : 1
Multiples : 1
1 : USD 0.378
10 : USD 0.2464
100 : USD 0.2212
235 : USD 0.0742
644 : USD 0.07

   
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We are delighted to provide the PJA3439-AU_R1_000A1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJA3439-AU_R1_000A1 and other electronic components in the MOSFETs category and beyond.

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PPJA3439-AU 60V P-Channel Enhancement Mode MOSFET SOT-23 Unit : inch(mm) Voltage -60 V Current -300mA Features R , V -10V, I -500mA<4 DS(ON) GS D R , V -4.5V, I -200mA<6 DS(ON) GS D R , V -2.5V, I -50mA<13 DS(ON) GS D Advanced Trench Process Technology Specially Designed for Relay driver, Speed line drive, etc AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -60 DS V Gate-Source Voltage V +20 GS Continuous Drain Current I -300 D mA Pulsed Drain Current I -1000 DM o T =25 C 500 mW A Power Dissipation P D o o Derate above 25 C 4 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal Resistance (Note 3) o R 250 JA - Junction to Ambient C/W May 12,2017-REV.00 Page 1 PPJA3439-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS (Note 1) Static Drain-Source Breakdown Voltage BV V =0V,I =-250uA -60 - - DSS GS D V Gate Threshold Voltage V V =V , I =-250uA -1.0 -1.5 -2.5 GS(th) DS GS D V =-10V,I =-500mA - 2.4 4 GS D Drain-Source On-State Resistance R V =-4.5V,I =-200mA - 2.65 6 DS(on) GS D V =-2.5V,I =-50mA - 4.5 13 GS D Zero Gate Voltage Drain Current I V =-48V,V =0V - - -1 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - - +100 nA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 1.1 - g V =-25V, I =-100mA, DS D Gate-Source Charge Q - 0.3 - nC gs V =-4.5V GS Gate-Drain Charge Q - 0.2 - gd Input Capacitance Ciss - 51 - V =-25V, V =0V, DS GS Output Capacitance Coss - 15 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 2.2 - Turn-On Delay Time td - 4.8 - (on) V =-25V, I =-100mA, DD D Turn-On Rise Time tr - 19 - V =-10V, ns GS Turn-Off Delay Time td - 52 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 32 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -300 mA S Diode Forward Current Diode Forward Voltage V I =-500mA, V =0V - -0.95 -1.3 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is JA defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. May 12,2017-REV.00 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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