PPJA3439-AU 60V P-Channel Enhancement Mode MOSFET SOT-23 Unit : inch(mm) Voltage -60 V Current -300mA Features R , V -10V, I -500mA<4 DS(ON) GS D R , V -4.5V, I -200mA<6 DS(ON) GS D R , V -2.5V, I -50mA<13 DS(ON) GS D Advanced Trench Process Technology Specially Designed for Relay driver, Speed line drive, etc AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-23 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.0003 ounces, 0.0084 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -60 DS V Gate-Source Voltage V +20 GS Continuous Drain Current I -300 D mA Pulsed Drain Current I -1000 DM o T =25 C 500 mW A Power Dissipation P D o o Derate above 25 C 4 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal Resistance (Note 3) o R 250 JA - Junction to Ambient C/W May 12,2017-REV.00 Page 1 PPJA3439-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS (Note 1) Static Drain-Source Breakdown Voltage BV V =0V,I =-250uA -60 - - DSS GS D V Gate Threshold Voltage V V =V , I =-250uA -1.0 -1.5 -2.5 GS(th) DS GS D V =-10V,I =-500mA - 2.4 4 GS D Drain-Source On-State Resistance R V =-4.5V,I =-200mA - 2.65 6 DS(on) GS D V =-2.5V,I =-50mA - 4.5 13 GS D Zero Gate Voltage Drain Current I V =-48V,V =0V - - -1 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - - +100 nA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 1.1 - g V =-25V, I =-100mA, DS D Gate-Source Charge Q - 0.3 - nC gs V =-4.5V GS Gate-Drain Charge Q - 0.2 - gd Input Capacitance Ciss - 51 - V =-25V, V =0V, DS GS Output Capacitance Coss - 15 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 2.2 - Turn-On Delay Time td - 4.8 - (on) V =-25V, I =-100mA, DD D Turn-On Rise Time tr - 19 - V =-10V, ns GS Turn-Off Delay Time td - 52 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 32 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -300 mA S Diode Forward Current Diode Forward Voltage V I =-500mA, V =0V - -0.95 -1.3 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. R is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is JA defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. May 12,2017-REV.00 Page 2