PJA3470 100V N-Channel Enhancement Mode MOSFET SOT-23 100 V 1.3 A Voltage Current Features R , V 10V, I 1.3A<320m DS(ON) GS D R , V 4.5V, I 0.6A<330m DS(ON) GS D Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case : SOT-23 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0003 ounces, 0.0084 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 100 DS V Gate-Source Voltage VGS +20 o T =25 C 1.3 A (Note 4) Continuous Drain Current ID o TA=70 C 1.0 A (Note 1) Pulsed Drain Current I 5.2 DM o TA=25 C 1.2 Power Dissipation P W D o T =70 C 0.8 A o Operating Junction and Storage Temperature Range TJ,TSTG -55~150 C Typical Thermal Resistance o R 100 C/W JA (Note 5) - Junction to Ambient October 6,2020 PJA3470-REV.00 Page 1PJA3470 o Electrical Characteristics (TA=25 C unless otherwise noted) PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 100 - - DSS GS D V Gate Threshold Voltage VGS(th) VDS=VGS, ID=250uA 1.0 2.06 2.5 V =10V, I =1.3A - 290 320 GS D Drain-Source On-State Resistance RDS(on) m VGS=4.5V, ID=0.6A - 295 330 Zero Gate Voltage Drain Current I V =100V, V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current IGSS VGS=+20V, VDS=0V - - +100 nA (Note 6) Dynamic Total Gate Charge Qg - 9.1 - V =50V, I =1.3A, DS D Gate-Source Charge Q - 2.1 - nC gs (Note 2,3) V =10V GS Gate-Drain Charge Qgd - 1.4 - Input Capacitance Ciss - 508 - VDS=30V, VGS=0V, Output Capacitance Coss - 29 - pF f=1MHZ Reverse Transfer Capacitance Crss - 18 - Turn-On Delay Time td(on) - 2 - VDD=50V, ID=1.3A, Turn-On Rise Time tr - 21 - VGS=10V, RG=3 ns Turn-Off Delay Time td(off) - 12 - (Note 2,3) Turn-Off Fall Time tf - 19 - Drain-Source Diode Maximum Continuous Drain-Source IS --- - - 1.3 A Diode Forward Current Diode Forward Voltage VSD IS=1A, VGS=0V - 0.78 1.2 V NOTES : 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. Repetitive rating, pulse width limited by junction temperature T =150C. Ratings are based on low frequency and J(MAX) duty cycles to keep initial T =25C. J 4. The maximum current rating is package limited. 5. R JA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is 2 defined as the solder mounting surface of the drain pins. Mounted on a 1 inch with 2oz.square pad of copper. 6. Guaranteed by design, not subject to production testing. October 6,2020 PJA3470-REV.00 Page 2