PPJD25N06A 60V N-Channel Enhancement Mode MOSFET 60 V 25 A Voltage Current Features R , V 10V,I 15A<34m DS(ON) GS D R , V 4.5V,I 10A<40m DS(ON) GS D High switching speed TO-252AA Improved dv/dt capability Low reverse transfer capacitance Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std.. (Halogen Free) Mechanical Data Case : TO-252AA Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0104 ounces, 0.297grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 60 V DS Gate-Source Voltage V +20 V GS o T =25 C 25 C Continuous Drain Current I D o T =100 C 16 A C (Note 1) o Pulsed Drain Current T =25 C I 100 C DM o T =25 C 40 C Power Dissipation PD W o T =100 C 16 C o T =25 C 5.5 A A Continuous Drain Current I D o T =70 C 4.4 A A o Power Dissipation T =25 C 2.0 A PD W o Power Dissipation T =70 C 1.3 A (Note 6) Single Pulse Avalanche Energy E 24 mJ AS o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Junction to Case R 3.1 Typical Thermal Resistance J C o C/W (Note 4,5) Junction to Ambient R 62.5 J A Limited only By Maximum Junction Temperature July 26,2016-REV.01 Page 1 PPJD25N06A o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =250uA 60 - - V DSS GS D Gate Threshold Voltage V V =V ,I =250uA 1.0 1.83 2.5 V GS(th) DS GS D V =10V,I =15A - 28 34 GS D Drain-Source On-State Resistance R m DS(on) V =4.5V,I =10A - 33 40 GS D Zero Gate Voltage Drain Current I V =60V,V =0V - - 1.0 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - - +100 nA GSS GS DS (Note 7) Dynamic Total Gate Charge Q - 20 - g V =30V, I =20A, DS D Gate-Source Charge Q - 3.8 - nC gs (Note 1,2) V =10V GS Gate-Drain Charge Q - 3.9 - gd Input Capacitance Ciss - 1173 - V =25V, V =0V, DS GS Output Capacitance Coss - 63 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 44 - Turn-On Delay Time td - 7.1 - (on) V =15V, I =1A, DD D Turn-On Rise Time t - 25 - r V =10V, R =6 ns GS G Turn-Off Delay Time td - 31 - (off) (Note 1,2) Turn-Off Fall Time t - 20 - f Drain-Source Diode Maximum Continuous Drain-Source I --- - - 25 A S Diode Forward Current Diode Forward Voltage V I =1A,V =0V - 0.72 1.2 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep initial TJ =25C. 4. The maximum current rating is package limited. 5. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is 2 defined as the solder mounting surface of the drain pins. Mounted on a 1 inch with 2oz.square pad of copper. 6. The test condition is L=0.1mH, I =22A, V =25V, V =10V AS DD GS 7. Guaranteed by design, not subject to production testing. July 26,2016-REV.01 Page 2