X-On Electronics has gained recognition as a prominent supplier of PJE138K-AU_R1_000A1 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJE138K-AU_R1_000A1 MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJE138K-AU_R1_000A1 Panjit

PJE138K-AU_R1_000A1 electronic component of Panjit
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Part No.PJE138K-AU_R1_000A1
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected
Datasheet: PJE138K-AU_R1_000A1 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.3887 ea
Line Total: USD 0.39 
Availability - 7948
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7948
Ship by Wed. 13 Nov to Fri. 15 Nov
MOQ : 1
Multiples : 1
1 : USD 0.3887
10 : USD 0.2588
100 : USD 0.1414
1000 : USD 0.1196
4000 : USD 0.1093
8000 : USD 0.1
24000 : USD 0.0966

   
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We are delighted to provide the PJE138K-AU_R1_000A1 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJE138K-AU_R1_000A1 and other electronic components in the MOSFETs category and beyond.

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PPJE138K-AU 50V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm) 50 V 350mA Voltage Current Features R , V 10V, I 500mA<1.6 DS(ON) GS D R , V 4.5V, I 200mA<2.5 DS(ON) GS D R , V 2.5V, I 100mA<4.5 DS(ON) GS D Advanced Trench Process Technology Specially Designed for Battery Operated Systems, Solid- State Relays Drivers: Relay, Displays, Memories, etc ESD Protected 2KV HBM AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC61249 standard Mechanical Data Case : SOT-523 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.00007 ounces, 0.002 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 50 DS V Gate-Source Voltage V +20 GS (Note 4) Continuous Drain Current I 350 D mA (Note 1) Pulsed Drain Current I 1200 DM o T =25 C 223 mW A Power Dissipation P D o o Derate above 25 C 1.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal Resistance (Note 3,4) o R 560 JA - Junction to Ambient C/W May 12,2017-REV.00 Page 1 PPJE138K-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 50 - - DSS GS D V Gate Threshold Voltage V V =V , I =250uA 0.8 1 1.5 GS(th) DS GS D V =10V, I =500mA - 0.96 1.6 GS D Drain-Source On-State Resistance R V =4.5V, I =200mA - 1.25 2.5 DS(on) GS D V =2.5V, I =100mA - 2.73 4.5 GS D Zero Gate Voltage Drain Current I V =50V, V =0V - - 1 DSS DS GS uA Gate-Source Leakage Current I V =+20V, V =0V - - +10 GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 0.63 1 g V =25V, I =250mA, DS D Gate-Source Charge Q - 0.2 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.23 - gd Input Capacitance Ciss - 25 50 V =25V, V =0V, DS GS Output Capacitance Coss - 9.5 20 pF f=1MHZ Reverse Transfer Capacitance Crss - 2.1 5 Turn-On Delay Time td - 2.2 5 (on) V =25V, I =500mA, DD D Turn-On Rise Time tr 19.2 38 V =10V, ns GS Turn-Off Delay Time td 6.2 12 (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 23 50 Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V - 0.86 1.5 V SD S GS NOTES: 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. May 12,2017-REV.00 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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