PPJE138K-AU 50V N-Channel Enhancement Mode MOSFET ESD Protected SOT-523 Unit : inch(mm) 50 V 350mA Voltage Current Features R , V 10V, I 500mA<1.6 DS(ON) GS D R , V 4.5V, I 200mA<2.5 DS(ON) GS D R , V 2.5V, I 100mA<4.5 DS(ON) GS D Advanced Trench Process Technology Specially Designed for Battery Operated Systems, Solid- State Relays Drivers: Relay, Displays, Memories, etc ESD Protected 2KV HBM AEC-Q101 qualified Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC61249 standard Mechanical Data Case : SOT-523 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.00007 ounces, 0.002 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 50 DS V Gate-Source Voltage V +20 GS (Note 4) Continuous Drain Current I 350 D mA (Note 1) Pulsed Drain Current I 1200 DM o T =25 C 223 mW A Power Dissipation P D o o Derate above 25 C 1.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal Resistance (Note 3,4) o R 560 JA - Junction to Ambient C/W May 12,2017-REV.00 Page 1 PPJE138K-AU o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =250uA 50 - - DSS GS D V Gate Threshold Voltage V V =V , I =250uA 0.8 1 1.5 GS(th) DS GS D V =10V, I =500mA - 0.96 1.6 GS D Drain-Source On-State Resistance R V =4.5V, I =200mA - 1.25 2.5 DS(on) GS D V =2.5V, I =100mA - 2.73 4.5 GS D Zero Gate Voltage Drain Current I V =50V, V =0V - - 1 DSS DS GS uA Gate-Source Leakage Current I V =+20V, V =0V - - +10 GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 0.63 1 g V =25V, I =250mA, DS D Gate-Source Charge Q - 0.2 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.23 - gd Input Capacitance Ciss - 25 50 V =25V, V =0V, DS GS Output Capacitance Coss - 9.5 20 pF f=1MHZ Reverse Transfer Capacitance Crss - 2.1 5 Turn-On Delay Time td - 2.2 5 (on) V =25V, I =500mA, DD D Turn-On Rise Time tr 19.2 38 V =10V, ns GS Turn-Off Delay Time td 6.2 12 (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 23 50 Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V - 0.86 1.5 V SD S GS NOTES: 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. May 12,2017-REV.00 Page 2