PPJS6421 20V P-Channel Enhancement Mode MOSFET SOT-23 6L-1 Unit : inch(mm) -20 V -7.4 A Voltage Current Features R , V -4.5V, I -5A<26m DS(ON) GS D R , V -2.5V, I -4A<32m DS(ON) GS D R , V -1.8V, I -3A<40m DS(ON) GS D Advanced Trench Process Technology Specially Designed for Switch Load, PWM Application, etc Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case : SOT-23 6L-1 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight : 0.0005 ounces, 0.014 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V -20 DS V Gate-Source Voltage V +10 GS (Note 4) Continuous Drain Current I -7.4 D A (Note 1) Pulsed Drain Current I -29.6 DM o T =25 C 2 W a Power Dissipation P D o o Derate above 25 C 16 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal Resistance (Note 3,4) o R 62.5 JA - Junction to Ambient C/W March 8,2019-REV.00 Page 1 PPJS6421 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V, I =-250uA -20 - - DSS GS D V Gate Threshold Voltage V V =V , I =-250uA -0.3 -0.55 -1 GS(th) DS GS D V =-4.5V, I =-5A - 21 26 GS D Drain-Source On-State Resistance R V =-2.5V, I =-4A - 26 32 m DS(on) GS D V =-1.8V, I =-3A - 32 40 GS D Zero Gate Voltage Drain Current I V =-20V, V =0V - - -1 uA DSS DS GS Gate-Source Leakage Current I V =+10V, V =0V - - +100 nA GSS GS DS (Note 5) Dynamic Total Gate Charge Q - 16.5 - g V =-10V, I =-5A, DS D Gate-Source Charge Q - 2.6 - nC gs (Note 1,2) V =-4.5V GS Gate-Drain Charge Q - 3.1 - gd Input Capacitance Ciss - 1620 - V =-15V, V =0V, DS GS Output Capacitance Coss - 220 - pF f=1MHZ Reverse Transfer Capacitance Crss - 160 - Turn-On Delay Time td - 22 - (on) V =-10V, I =-1A, DD D Turn-On Rise Time tr - 25 - V =-4.5V, ns GS Turn-Off Delay Time td - 138 - (off) (Note 1,2) R =25 G Turn-Off Fall Time tf - 53 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - -2 A S Diode Forward Current Diode Forward Voltage V I =-1A, V =0V - -0.7 -1 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2%. 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins mounted on a 1 inch FR-4 with 2oz. square pad of copper. 4. The maximum current rating is package limited. 5. Guaranteed by design, not subject to production testing. March 8,2019-REV.00 Page 2