X-On Electronics has gained recognition as a prominent supplier of PJX138K_R1_00001 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PJX138K_R1_00001 MOSFETs are a product manufactured by Panjit. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PJX138K_R1_00001 Panjit

PJX138K_R1_00001 electronic component of Panjit
PJX138K_R1_00001 Panjit
PJX138K_R1_00001 MOSFETs
PJX138K_R1_00001  Semiconductors

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See Product Specifications
Part No. PJX138K_R1_00001
Manufacturer: Panjit
Category: MOSFETs
Description: MOSFET /8KB/TR/7"/HF/4K/SOT-563/MOS/SOT/NFET-50TEMN/NF50TE-QI01/PJ///
Datasheet: PJX138K_R1_00001 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.465 ea
Line Total: USD 0.46 
Availability - 32375
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
32375
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.465
10 : USD 0.3525
100 : USD 0.192
500 : USD 0.1177
1000 : USD 0.0913
2000 : USD 0.0803
4000 : USD 0.0737
8000 : USD 0.066
24000 : USD 0.0594

3855
Ship by Mon. 02 Jun to Wed. 04 Jun
MOQ : 1
Multiples : 1
1 : USD 0.322
10 : USD 0.2058
100 : USD 0.133
193 : USD 0.0966
531 : USD 0.0924

   
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We are delighted to provide the PJX138K_R1_00001 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PJX138K_R1_00001 and other electronic components in the MOSFETs category and beyond.

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PPJX138K 50V N-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm) 50 V 350mA Voltage Current Features RDS(ON) , VGS 10V, ID 500mA<1.6 RDS(ON) , VGS 4.5V, ID 200mA<2.5 RDS(ON) , VGS 2.5V, ID 100mA<4.5 Advanced Trench Process Technology Specially Designed for Battery Operated Systems, Solid-State Relays Drivers: Relay, Displays, Memories, etc. ESD Protected 2KV HBM Lead free in compliance with EU RoHS 2011/65/EU directive. Green molding compound as per IEC61249 Std. (Halogen Free) Mechanical Data Case: SOT-563 Package Terminals : Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00009 ounces, 0.0026 grams o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 50 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 350 mA D Pulsed Drain Current I 1200 mA DM o T =25 C 223 mW A Power Dissipation P D o o Derate above 25 C 1.8 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 560 JA - Junction to Ambient C/W May 6,2016-REV.07 Page 1 PPJX138K o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =250uA 50 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.8 1.0 1.5 V GS(th) DS GS D V =10V,I =500mA - 0.96 1.6 GS D Drain-Source On-State Resistance R V =4.5V,I =200mA - 1.25 2.5 DS(on) GS D V =2.5V,I =100mA - 2.73 4.5 GS D Zero Gate Voltage Drain Current I V =50V,V =0V - 0.01 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - +3.0 +10 uA GSS GS DS Dynamic Total Gate Charge Q - 0.63 1 g V =25V, I =250mA, DS D Gate-Source Charge Q - 0.2 - nC gs (Note 1,2) V =4.5V GS Gate-Drain Charge Q - 0.23 - gd Input Capacitance Ciss - 25 50 V =25V, V =0V, DS GS Output Capacitance Coss - 9.5 20 pF f=1.0MHZ Reverse Transfer Capacitance Crss - 2.1 5 Switching Turn-On Delay Time td - 2.2 5 (on) V =25V, I =500mA, DD D Turn-On Rise Time tr - 19.2 38 V =10V, ns GS Turn-Off Delay Time td - 6.2 12 (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 23 50 Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V - 0.86 1.5 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper May 6,2016-REV.07 Page 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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