PPJX8838 50V N-Channel Enhancement Mode MOSFET ESD Protected SOT-563 Unit : inch(mm) 50 V 360mA Voltage Current Features RDS(ON) , VGS 10V, ID 500mA<1.45 RDS(ON) , VGS 4.5V, ID 200mA<1.95 RDS(ON) , VGS 2.5V, ID 100mA<4.0 RDS(ON) , VGS 1.8V, ID 10mA<6.0 Advanced Trench Process Technology ESD Protected 2KV HBM Specially Designed for Relay driver, Speed line drive, etc. Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case: SOT-563 Package Terminals: Solderable per MIL-STD-750, Method 2026 Approx. Weight: 0.00009 ounces, 0.0026 grams Marking: X38 o Maximum Ratings and Thermal Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL LIMIT UNITS Drain-Source Voltage V 50 V DS Gate-Source Voltage V +20 V GS Continuous Drain Current I 360 mA D Pulsed Drain Current I 1200 mA DM o T =25 C 300 mW A Power Dissipation P D o o Derate above 25 C 2.4 mW/ C o Operating Junction and Storage Temperature Range T ,T -55~150 C J STG Typical Thermal resistance (Note 3) o R 417 JA - Junction to Ambient C/W September 20,2019-REV.03 Page 1 PPJX8838 o Electrical Characteristics (T =25 C unless otherwise noted) A PARAMETER SYMBOL TEST CONDITION MIN. TYP. MAX. UNITS Static Drain-Source Breakdown Voltage BV V =0V,I =250uA 50 - - V DSS GS D Gate Threshold Voltage V V =V , I =250uA 0.5 0.86 1.0 V GS(th) DS GS D V =10V,I =500mA - 1.2 1.45 GS D V =4.5V,I =200mA - 1.3 1.95 GS D Drain-Source On-State Resistance R DS(on) V =2.5V,I =100mA - 1.7 4.0 GS D V =1.8V,I =10mA - 4.0 6.0 GS D Zero Gate Voltage Drain Current I V =50V,V =0V - - 1 uA DSS DS GS Gate-Source Leakage Current I V =+20V,V =0V - - +10 uA GSS GS DS (Note 4) Dynamic Total Gate Charge Q - 0.95 - g V =25V, I =500mA, DS D Gate-Source Charge Q - 0.34 - nC gs V =4.5V GS Gate-Drain Charge Q - 0.32 - gd Input Capacitance Ciss - 36 - V =25V, V =0V, DS GS Output Capacitance Coss - 11 - pF f=1.0MHZ Reverse Transfer Capacitance Crss - 6.6 - Turn-On Delay Time td - 2.3 - (on) V =25V, I =500mA, DD D Turn-On Rise Time tr - 20 - V =10V, ns GS Turn-Off Delay Time td - 7 - (off) (Note 1,2) R =6 G Turn-Off Fall Time tf - 20 - Drain-Source Diode Maximum Continuous Drain-Source I --- - - 500 mA S Diode Forward Current Diode Forward Voltage V I =500mA, V =0V - 0.9 1.5 V SD S GS NOTES : 1. Pulse width<300us, Duty cycle<2% 2. Essentially independent of operating temperature typical characteristics. 3. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. mounted on a 1 inch square pad of copper 4. Guaranteed by design, not subject to production testing. September 20,2019-REV.03 Page 2