PE42412 Document Category: Product Specification UltraCMOS SP12T RF Switch, 10 MHz8 GHz Features Figure 1 PE42412 Functional Diagram High isolation: 39 dB 6 GHz Low insertion loss: 1.3 dB 6 GHz RFC Fast switching time of 232 ns Power handling of 33 dBm CW Logic select (LS) pin provides maximum control RF12 RF1 logic flexibility RF2 RF11 Terminated all-off state mode RF3 RF10 Packaging 32-lead 5 5 0.85 mm QFN RF4 RF9 RF5 RF8 Applications RF6 RF7 Wireless infrastructure Wireless applications up to 8 GHz CMOS Control switch Driver and ESD Filter bank switching configuration RF signal routing V1 V2 V3 V4 50 Product Description The PE42412 is a HaRP technology-enhanced absorptive SP12T RF switch that supports a frequency range from 10 MHz to 8 GHz. It delivers high isolation, low insertion loss and fast switching time, making this device ideal for filter bank switching and RF signal routing in wireless infrastructure and wireless applications up to 8 GHz. No blocking capacitors are required if DC voltage is not present on the RF ports. The PE42412 is manufactured on Peregrines UltraCMOS process, a patented advanced form of silicon-on- insulator (SOI) technology. Peregrines HaRP technology enhancements deliver high linearity and excellent harmonics performance. It is an innovative feature of the UltraCMOS process, offering the performance of GaAs with the economy and integration of conventional CMOS. 2017, Peregrine Semiconductor Corporation. All rights reserved. Headquarters: 9380 Carroll Park Drive, San Diego, CA, 92121 Product Specification DOC-75868-3 (03/2017) www.psemi.comPE42412 SP12T RF Switch Absolute Maximum Ratings Exceeding absolute maximum ratings listed in Table 1 may cause permanent damage. Operation should be restricted to the limits in Table 2. Operation between operating range maximum and absolute maximum for extended periods may reduce reliability. ESD Precautions When handling this UltraCMOS device, observe the same precautions as with any other ESD-sensitive devices. Although this device contains circuitry to protect it from damage due to ESD, precautions should be taken to avoid exceeding the rating specified in Table 1. Latch-up Immunity Unlike conventional CMOS devices, UltraCMOS devices are immune to latch-up. Table 1 Absolute Maximum Ratings for PE42412 Parameter/Condition Min Max Unit Supply voltage, V 0.3 5.5 V DD Digital input voltage (V1, V2, V3, V4, LS) 0.3 3.6 V RF input power (RFCRFX, 50) See Figure 2 dBm (1) See Figure 2 dBm RF input power into terminated ports, CW (RFX, 50 ) Maximum junction temperature +150 C Storage temperature range 65 +150 C (2) 1000 V ESD voltage HBM, all pins (3) 1000 V ESD voltage CDM, all pins Notes: 1) 100% duty cycle, all bands, 50 . 2) Human body model (MIL-STD 883 Method 3015). 3) Charged device model (JEDEC JESD22-C101). Page 2 DOC-75868-3 (03/2017) www.psemi.com