Product Information

CGA7718ZTR13

CGA7718ZTR13 electronic component of Qorvo

Datasheet
RF Amplifier 50-1000MHz NF 4.0dB OutLR 16dB

Manufacturer: Qorvo
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 1
Multiples : 1
1 : USD 9.4383
25 : USD 7.7145
100 : USD 6.6461
250 : USD 5.4386
500 : USD 4.6159
1000 : USD 3.7825
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Mounting Style
Package / Case
Type
Technology
Operating Frequency
P1dB - Compression Point
Gain
Operating Supply Voltage
NF - Noise Figure
OIP3 - Third Order Intercept
Minimum Operating Temperature
Maximum Operating Temperature
Operating Supply Current
Packaging
Test Frequency
Brand
Number Of Channels
Input Return Loss
Product Type
Factory Pack Quantity :
Subcategory
Cnhts
Hts Code
Mxhts
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CGA-7718Z Push-Pull 50MHz to 1000MHz High Linearity InGaP HBT CGA-7718Z Amplifier PUSH-PULL 50MHz to 1000MHz HIGH LINEARITY InGaP HBT AMPLIFIER NOT FOR NEW DESIGNS Package: SOIC-8 Product Description Features RFMDs CGA-7718Z is a high performance InGaP HBT MMIC Amplifier. Designed 5V Single Supply with the InGaP process technology for excellent reliability. A Darlington configura- Excellent Linearity Perfor- tion is utilized for broadband performance. The heterojunction increases break- mance at +34dBmV Output down voltage and minimizes leakage current between junctions. The CGA-7718Z Power Per Tone contains two amplifiers for use in wideband push-pull CATV amplifiers requiring Two Amplifiers in Each SOIC-8 excellent second order performance. The second and third order non-linearities are Package Simplify Push-Pull greatly improved in the push-pull configuration. Configuration PC Board Lay- out Optimum Technology Available in Lead-Free, RoHS Matching Applied Amplifier Configuration Compliant, and Green Pack- GaAs HBT aging GaAs MESFET InGaP HBT SOIC-8 Package SiGe BiCMOS 1 8 Applications Si BiCMOS SiGe HBT CATV Head End Driver and 2 7 GaAs pHEMT Predriver Amplifier Si CMOS CATV Line Driver Amplifier Si BJT 3 6 GaN HEMT InP HBT RF MEMS 4 5 LDMOS Specification Parameter Unit Condition Min. Typ. Max. Small Signal Gain 17.4 dB 50MHz to 1000MHz Gain Flatness 0.6 dB 50MHz to 1000MHz Output IP3 41 dBm 500MHz Tone Spacing=1MHz P per Tone=+6dBm OUT Output Power at 1dB Gain 23 dBm 500MHz Compression Input Return Loss 20 dB 500MHz Output Return Loss 16 dB 500MHz Noise Figure 4.0 dB 50MHz to 1000MHz Balun Insertion Loss Included CSO 80 dBc 79 Ch., Flat Tilt, +34dBmV CTB 78 dBc 79 Ch., Flat Tilt, +34dBmV XMOD 70 dBc 79 Ch., Flat Tilt, +34dBmV Device Operating Voltage 5.0 V Device Operating Current 215 mA 5V V CC Thermal Resistance 30 C/W Junction to case slug. (Junction to Lead) Test Conditions: V =5V, I =215mA Typ., T =25C, Z =Z =75 , Push Pull Application Circuit DD D L S L RF MICRO DEVICES, RFMD, Optimum Technology Matching, Enabling Wireless Connectivity, PowerStar, POLARIS TOTAL RADIO and UltimateBlue are trademarks of RFMD, LLC. BLUETOOTH is a trade- mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. 2006, RF Micro Devices, Inc. 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical DS121030 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. 1 of 8 NOT FOR NEW DESIGNSCGA-7718Z Absolute Maximum Ratings Caution ESD sensitive device. Parameter Rating Unit Exceeding any one or a combination of the Absolute Maximum Rating conditions may Max Device Current (I ) 300 mA D cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical perfor- Max Device Voltage (V)6.0 V D mance or functional operation of the device under Absolute Maximum Rating condi- tions is not implied. Max RF Input Power 18 dBm RoHS status based on EUDirective2002/95/EC (at time of this document revision). Max Junction Temp (T ) 150 C J The information in this publication is believed to be accurate and reliable. However, no responsibility is assumed by RF Micro Devices, Inc. RFM) for its use, nor for any Operating Temp Range (T ) -40 to +85 C L infringement of patents, or other rights of third parties, resulting from its use. No license is granted by implication or otherwise under any patent or patent rights of Max Storage Temp 150 C RFMD. RFMD reserves the right to change component circuitry, recommended appli- cation circuitry and specifications at any time without prior notice. Min Storage Temp -40 C Operation of this device beyond any one of these limits may cause permanent dam- age. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression: I V <(T -T )/R , j-l and T =T D D J L TH L LEAD Input Return Loss Output Return Loss 35 30 30 25 25 20 20 dB 15 dB 15 10 10 5 5 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 Frequency Frequency Gain Reverse Isolation 20 25 16 20 12 15 dB dB 8 10 4 5 0 0 0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200 Frequency Frequency 7628 Thorndike Road, Greensboro, NC 27409-9421 For sales or technical 2 of 8 support, contact RFMD at (+1) 336-678-5570 or sales-support rfmd.com. DS121030 NOT FOR NEW DESIGNS

Tariff Desc

8542.31.00 51 No ..Application Specific (Digital) Integrated Circuits (ASIC)

Electronic integrated circuits: Processors and controllers, whether or not combined with memories, converters, logic circuits, amplifiers, clock and timing circuits, or other circuits
Monolithic integrated circuits:
Qorvo
Qorvo, Inc.
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RFMD
RFMD (Qorvo)
TriQuint
TriQuint (Qorvo)
TRIQUINT SEMI
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TriQuint Semiconductor, Inc

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