TGA2622-SM 910 GHz 35 Watt GaN Power Amplifier Product Description Qorvos TGA2622-SM is a packaged, high power X-Band amplifier fabricated on Qorvos production 0.25um GaN on SiC process. Operating from 9-10GHz, the TGA2622-SM typically generates 35W of saturated output power with a power-added efficiency greater than 42% and 27.5dB of large signal gain. QFN 7x7 mm 22L The TGA2622-SM is packaged in a 7x7mm air-cavity, laminate based QFN. Both RF ports are internally DC blocked and matched to 50 ohms enabling simple system Product Features integration. Ideally suited for pulsed applications, the TGA2622-SM offers superior power, PAE and gain Frequency Range: 9 10 GHz performance that can save costs on existing platforms while P : 45.5 dBm PIN = 18 dBm SAT enabling the development of future systems. PAE: 42% PIN = 18 dBm Power Gain: 27.5 dB PIN = 18 dBm Lead-free and RoHS compliant. Bias: V = 28 V, I = 290 mA D DQ (Pulsed VD: PW = 100 us and DC = 10 %) Package Dimensions: 7 x 7 x 1.75 mm Performance is typical across frequency. Please reference electrical specification table and data plots for more details. Functional Block Diagram Applications Weather and Marine Radar Ordering Information Part Description 9 10 GHz 35 W GaN Power TGA2622-SM Amplifier TGA2622-SM EVB Evaluation Board - 1 of 17 - Data Sheet Rev. G, July 2020 Subject to change without notice www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential TGA2622-SM 910 GHz 35 Watt GaN Power Amplifier Recommended Operating Conditions Absolute Maximum Ratings ConditioConditions Parameter Value Parameter Value Drain Voltage (VD) 40 V Drain Voltage (VD) 28 V Gate Voltage Range (V ) -8 to 0V Drain Current (quiescent, I ) 290 mA G DQ Drain Current (ID) 4.3 A Gate Voltage Range (V ) 2.8 to 2.0 V G Gate Current (I ) See page 11 G Operating Temperature Range 40 to 85C Power Dissipation (P ), 85C, CW 88 W DISS Electrical specifications are measured at specified test conditions. Specifications are not guaranteed over all Input Power (P ), CW, 50, IN 24 dBm recommended operating conditions. VD = 28V, 85C Input Power (PIN), CW, VSWR 3:1, 24 dBm VD = 28V, 85C Mounting Temperature (30 seconds) 260 C Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Test conditions unless otherwise noted: 25C, VD = 28V, IDQ = 290mA, Pulsed VD: PW = 100 us, DC = 10% Parameter Min Typ Max Units Operational Frequency Range 9 10 GHz Frequency = 9 GHz 45 45.7 dBm Output Power PIN = 18dBm Frequency = 9.5 GHz 45 45.8 dBm Frequency = 10 GHz 45 45.8 dBm Frequency = 9 GHz 40 46.4 Power Added Efficiency Frequency = 9.5 GHz 40 46.4 % PIN = 18dBm Frequency = 10 GHz 35 43 Frequency = 9 GHz 31.5 Small Signal Gain Frequency = 9.5 GHz 32.7 dB Frequency = 10 GHz 31.4 Frequency = 9 GHz 14.7 Frequency = 9.5 GHz 15 Input Return Loss dB Frequency = 10 GHz 11 Frequency = 9 GHz 10.6 Output Return Loss Frequency = 9.5 GHz 9.3 dB Frequency = 10 GHz 12 Output Power Temperature Coefficient -0.02 dBm/C From 25C to 85C (Pin = 18dBm) - 2 of 17 - Data Sheet Rev. G, July 2020 Subject to change without notice www.qorvo.com 2020 Qorvo US, Inc. All rights reserved. Confidential