TGA2623-CP 1011GHz 32W GaN Power Amplifier Product Description Qorvos TGA2623-CP is a packaged high-power X-Band amplifier fabricated on Qorvos QGaN25 0.25 um GaN on SiC process. Operating from 10 to 11 GHz, the TGA2623- CP achieves 32 W saturated output power, a power-added efficiency of > 41 %, and power gain of 27 dB. The TGA2623-CP is packaged in a 10-lead 15x15 mm bolt- down package with a Cu base for superior thermal management. It can support a range of bias voltages and performs well under CW and pulsed conditions. Both RF ports are internally DC blocked and matched to 50 ohms allowing for simple system integration. The TGA2623-CP is ideally suited for both commercial and defense applications. Product Features Lead free and RoHS compliant. Frequency Range: 10 11 GHz PSAT: 45 dBm PIN = 18 dBm PAE: > 41 % PIN = 18 dBm Power Gain: 27 dB PIN = 18 dBm Bias: V = 28 V, I = 290 mA, pulsed (PW = 100 s, D DQ DC = 10 %) or CW Functional Block Diagram Package Dimensions: 15.2 x 15.2 x 3.5 mm Package base is pure Cu offering superior thermal management Performance is typical across frequency. Please 1 10 reference electrical specification table and data plots for more details 2 9 3 8 4 7 5 6 Applications X-band Radar. Ordering Information Part No. Description TGA2623-CP 1011GHz 32 W GaN Power Amplifier TGA2623-CP EVB TGA2623-CP Evaluation Board (EVB) Data Sheet Rev. B, September 2019 - 1 of 16 - www.qorvo.com TGA2623-CP 1011GHz 32W GaN Power Amplifier Absolute Maximum Ratings Recommended Operating Conditions Parameter Value/Range Parameter Value/Range Drain Voltage (VD) 40 V Drain Voltage (VD) (Pulsed: 28 V PW = 100 s, DC = 10 %, or CW) Gate Voltage Range (V ) -8 to 0 V G Drain Current (I ) 4.3 A Drain Current (IDQ) 290 mA D Gate Current (I ) See plot page 11 Gate Voltage (VG) 2.8 to 2.0 V G Power Dissipation (P ), 85 C 106 W Temperature (TBASE) -40 to 85 C DISS Electrical specifications are measured at specified test Input Power, CW, 50 , (P) 24 dBm IN conditions. Specifications are not guaranteed over all Input Power, CW, VSWR 3:1, 24 dBm recommended operating conditions. VD = 28 V, 85 C, (PIN) Mounting Temperature 260 C (30 Seconds) Storage Temperature -55 to 150 C Operation of this device outside the parameter ranges given above may cause permanent damage. These are stress ratings only, and functional operation of the device at these conditions is not implied. Electrical Specifications Parameter Condition Min Typ Max Units Operational Frequency Range 10 11 GHz Small Signal Gain 30 dB Input Return Loss > 10 dB Output Return Loss > 11 dB Output Power (PIN = 18 dBm) 10.0 GHz 44.4 45 dBm 10.5 GHz 44.2 45 dBm 11.0 GHz 44.0 45 dBm Power Added Eff. (P = 18 dBm) 10.0 GHz 36 > 41 % IN 10.5 GHz 36 > 41 % 11.0 GHz 37 > 41 % Power Gain PIN = 18 dBm 27 dB Gate Leakage (VD = 10V, VG = 3.7V) 15.94 0.455 0.0001 mA Pulsed 0.011 dBm/C Output Power Temperature Coefficient (25 C to 85 C only) CW 0.013 dBm/C V Recommended Operating Voltage 20 28 32 Test conditions unless otherwise noted: 25 C, VD = 28 V (Pulsed: PW = 100 s, DC = 10 %), IDQ = 290 mA Data Sheet Rev. B, September 2019 - 2 of 16 - www.qorvo.com