Preliminary Datasheet RJK0328DPB-01 R07DS0264EJ0500 (Previous: REJ03G1637-0400) Silicon N Channel Power MOS FET Rev.5.00 Power Switching Mar 01, 2011 Features High speed switching Capable of 4.5 V gate drive Low drive current High density mounting Low on-resistance R = 1.6 m typ. (at V = 10 V) DS(on) GS Pb-free Halogen-free Outline RENESAS Package code: PTZZ0005DA-A (Package name: LFPAK) 5 D 5 4 1, 2, 3 Source G 4 Gate 4 5 Drain 3 2 1 SSS 1 23 Absolute Maximum Ratings (Ta = 25C) Item Symbol Ratings Unit Drain to source voltage V 30 V DSS Gate to source voltage V 20 V GSS Drain current I 60 A D Note1 Drain peak current I 240 A D(pulse) Body-drain diode reverse drain current I 60 A DR Note 2 Avalanche current I 30 A AP Note 2 Avalanche energy E 90 mJ AR Note3 Channel dissipation Pch 65 W Note3 Channel to case thermal resistance ch-c 1.93 C/W Channel temperature Tch 150 C Storage temperature Tstg 55 to +150 C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25C, Rg 50 3. Tc = 25C R07DS0264EJ0500 Rev.5.00 Page 1 of 6 Mar 01, 2011 RJK0328DPB-01 Preliminary Electrical Characteristics (Ta = 25C) Item SymbolMin Typ Max Unit Test Conditions Drain to source breakdown voltage V 30 V I = 10 mA, V = 0 (BR)DSS D GS Gate to source leak current I 0.1 A V = 20 V, V = 0 GSS GS DS Zero gate voltage drain current I 1 A V = 30 V, V = 0 DSS DS GS Gate to source cutoff voltage V 1.2 2.5 V V = 10 V, I = 1 mA GS(off) DS D Note4 Static drain to source on state R 1.6 2.1 m I = 30 A, V = 10 V DS(on) D GS Note4 resistance R 2.1 2.9 m I = 30 A, V = 4.5 V DS(on) D GS Note4 Forward transfer admittance y 100 S I = 30 A, V = 10 V fs D DS Input capacitance Ciss 6380 pF V = 10 V, V = 0, DS GS f = 1 MHz Output capacitance Coss 1150 pF Reverse transfer capacitance Crss 330 pF Gate Resistance Rg 0.7 Total gate charge Qg 42 nC V = 10 V, V = 4.5 V, DD GS I = 60 A D Gate to source charge Qgs 15 nC Gate to drain charge Qgd 8.8 nC Turn-on delay time t 9.4 ns V = 10 V, I = 30 A, d(on) GS D V 10 V, R = 0.33 , Rise time t 4.3 ns DD L r Rg = 4.7 Turn-off delay time t 61.5 ns d(off) Fall time t 7.3 ns f Note4 Bodydrain diode forward voltage V 0.78 1.02 V I = 60 A, V = 0 DF F GS Bodydrain diode reverse recovery t 42 ns I = 60 A, V = 0 rr F GS time di / dt = 100 A/ s F Bodydrain diode reverse recovery Q 46 nC rr charge Notes: 4. Pulse test R07DS0264EJ0500 Rev.5.00 Page 2 of 6 Mar 01, 2011